K6T4008C1C-DB55 Samsung semiconductor, K6T4008C1C-DB55 Datasheet - Page 6

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K6T4008C1C-DB55

Manufacturer Part Number
K6T4008C1C-DB55
Description
512Kx8 bit Low Power CMOS Static RAM
Manufacturer
Samsung semiconductor
Datasheet

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K6T4008C1C Family
TIMMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1)
TIMING WAVEFORM OF READ CYCLE(2)
Address
Data Out
NOTES (READ CYCLE)
1.
2. At any given temperature and voltage condition,
Address
CS
OE
Data out
t
HZ
levels.
interconnection.
and
t
OHZ
are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage
Previous Data Valid
High-Z
t
LZ
t
t
OLZ
t
HZ
(Address Controlled
OH
(WE=V
(Max.) is less than
t
AA
t
CO1
IH
t
OE
)
t
AA
6
,
t
RC
CS=OE=V
t
t
RC
LZ
(Min.) both for a given device and from device to device
IL
, WE=V
Data Valid
IH
)
Data Valid
t
t
OHZ
OH
t
CMOS SRAM
HZ
Revision 1.0
April 1999

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