K6T4008C1C-DB55 Samsung semiconductor, K6T4008C1C-DB55 Datasheet - Page 4

• Manufacturer Part Number: K6T4008C1C-DB55
• Description: 512Kx8 bit Low Power CMOS Static RAM
• Manufacturer: Samsung semiconductor

CAPACITANCE
1. Capacitance is sampled, not 100% tested
RECOMMENDED DC OPERATING CONDITIONS
Note:
1. Commercial Product : T
2. Overshoot : V
3. Undershoot : -3.0V in case of pulse width
4. Overshoot and undershoot are sampled, not 100% tested.
DC AND OPERATING CHARACTERISTICS
K6T4008C1C Family
Input capacitance
Input/Output capacitance
Input leakage current
Output leakage current
Operating power supply current
Average operating current
Output low voltage
Output high voltage
Standby Current(TTL)
Standby Current(CMOS)
Supply voltage
Ground
Input high voltage
Input low voltage
Industrial Product : T
CC
Item
+3.0V in case of pulse width
Item
Item
A
=-40 to 85 C, otherwise specified
1)
A
=0 to 70 C, otherwise specified
(f=1MHz, T
Symbol
A
I
I
V
V
I
I
I
I
=25 C)
CC1
CC2
SB1
I
CC
LO
SB
OH
LI
OL
30ns
Symbol
30ns
C
C
V
CS=V
I
Cycle time=1 s, 100% duty, I
CS 0.2V, V
Cycle time=Min, 100% duty, I
I
I
CS=V
CS Vcc-0.2V, Other inputs=0~Vcc
IO
OL
OH
Symbol
IN
IN
IO
=0mA, CS=V
=2.1mA
Vcc
Vss
=Vss to Vcc
=-1.0mA
V
V
IH
IL
IH
IH
, Other inputs = V
or OE=V
IN
0.2V or V
IL
IH
, V
Test Condition
Test Conditions
or WE=V
IN
-0.5
V
V
=V
4
Min
4.5
2.2
IN
IO
0
IN
IL
=0V
=0V
3)
IL
IO
1)
or V
Vcc-0.2V
=0mA, CS=V
or V
IL
IO
, V
IH
=0mA
IH
, Read
IO
=Vss to Vcc
K6T4008C1C-L
K6T4008C1C-B
K6T4008C1C-P
K6T4008C1C-F
IL,
Typ
5.0
V
0
-
-
IN
=V
IH
Min
-
-
or V
IL
Vcc+0.5
Min
2.4
Max
-1
-1
5.5
0.8
-
-
-
-
-
-
-
-
-
0
CMOS SRAM
Max
10
8
2)
Typ
-
-
-
-
-
-
-
-
-
-
-
-
Max
100
0.4
10
55
80
20
30
Revision 1.0
1
1
8
3
-
Unit
April 1999
Unit
V
V
V
V
pF
pF
Unit
mA
mA
mA
mA
V
V
A
A
A