NDS336 Fairchild, NDS336 Datasheet - Page 5

• Manufacturer Part Number: NDS336
• Description: P-Channel Logic Level Enhancement Mode Field Effect Transistor
• Manufacturer: Fairchild

V
Typical Electrical Characteristics
GS
800
500
300
200
100
Figure 7. Breakdown Voltage Variation with
60
40
0.1
Figure 9. Capacitance Characteristics
Figure 11. Switching Test Circuit
1 . 0 6
1 . 0 4
1 . 0 2
0 . 9 8
0 . 9 6
1
-50
f = 1 MHz
V
R
GS
I
GEN
0.2
D
= 0V
= - 250µA
-25
-V
DS
Temperature
V
T
, DRAIN TO SOURCE VOLTAGE (V)
0.5
0
J
IN
G
, JUNCTION TEMPERATURE (°C)
2 5
1
D
S
V
5 0
DD
.
2
R
7 5
L
DUT
.
1 0 0
5
(continued)
.
1 2 5
V
10
C iss
C oss
OUT
C rss
1 5 0
20
0.0001
V
t
V
0.001
OUT
0.01
d(on)
0.1
Figure 8. Body Diode Forward Voltage Variation
IN
5
4
3
2
1
0
5
1
Figure 10. Gate Charge Characteristics
0.2
1 0 %
0
V
I
D
GS
= -1.2A
= 0V
Figure 12. Switching Waveforms.
-V
0.4
t
SD
5 0 %
o n
T = 125°C
1 0 %
, BODY DIODE FORWARD VOLTAGE (V)
J
2
t
with Source Current and
Temperature
9 0 %
PULSE WIDTH
Q
r
0.6
g
25°C
, GATE CHARGE (nC)
-55°C
4
t
0.8
V
d(off)
DS
= -5V
.
5 0 %
-15V
1
9 0 %
6
t
1 0 %
off
9 0 %
.
-10V
1.2
NDS336P Rev. D
INVERTED
t
f
8