NDS336 Fairchild, NDS336 Datasheet

NDS336

Manufacturer Part Number

NDS336

Description

P-Channel Logic Level Enhancement Mode Field Effect Transistor

Manufacturer

Fairchild

Datasheet

1.NDS336.pdf (6 pages)

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THERMAL CHARACTERISTICS

________________________________________________________________________________

SuperSOT

field

proprietary, high cell density, DMOS technology. This very high

density process is especially tailored to minimize on-state

resistance. These devices are particularly suited for low voltage

applications such as notebook computer power management,

portable electronics, and other battery powered circuits where

fast high-side switching, and low in-line power loss are needed

in a very small outline surface mount package.

NDS336P

P-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description

DSS

GSS

STG

effect

Parameter

Drain-Source Voltage

Gate-Source Voltage - Continuous

Maximum Drain Current - Continuous

Maximum Power Dissipation

Operating and Storage Temperature Range

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

-3 P-Channel logic level enhancement mode power

transistors

are

produced

- Pulsed

= 25°C unless otherwise noted

using

Fairchild's

(Note 1a)

(Note 1)

(Note 1a)

(Note 1b)

Features

-1.2 A, -20 V, R

Very low level gate drive requirements allowing direct

operation in 3V circuits. V

Proprietary package design using copper lead frame for

superior thermal and electrical capabilities.

High density cell design for extremely low R

Exceptional on-resistance and maximum DC current

capability.

Compact industry standard SOT-23 surface

package.

NDS336P

-55 to 150

DS(ON)

0.46

250

DS(ON)

-1.2

-20

-10

0.5

±8

= 0.2

= 0.27

GS(th)

< 1.0V.

@ V

= -4.5 V.

= -2.7 V

DS(ON)

June 1997

NDS336P Rev. E

Mount

Units

°C/W

°C

Related parts for NDS336

NDS336 Summary of contents

Page 1

... Exceptional on-resistance and maximum DC current capability. Compact industry standard SOT-23 surface package 25°C unless otherwise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1a) (Note 1) June 1997 = 0. -2.7 V DS(ON 0 -4.5 V. DS(ON) GS < 1.0V. GS(th) . DS(ON) Mount NDS336P Units -20 V ±8 V -1.2 A -10 0.5 W 0.46 -55 to 150 °C 250 °C/W 75 °C/W NDS336P Rev. E ...

Page 2

... 1.0 MHz -4 GEN Min Typ Max Units - µA -10 µA 100 nA -100 nA -0.5 -0. -0.3 -0.58 -0.8 0.22 0.27 0.34 0.49 0.16 0 360 pF 170 5.7 8.5 nC 0.7 nC 1.8 nC NDS336P Rev. E ...

Page 3

... C/W when mounted on a 0.001 in pad of 2oz copper Scale letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. Conditions -0.42 (Note Min Typ Max Units -0.42 A -10 A -0.65 -1 guaranteed by JC NDS336P Rev. E ...

Page 4

... Drain Current and Temperature. 1.2 -25°C 1.1 -125°C 1 0.9 0.8 0.7 0.6 -2.5 -3 -50 -25 Figure 6. Gate Threshold Variation -2.5 -2.7 -3.0 -3.5 -4 DRAIN CURRENT (A) D 25°C -55° - DRAIN CURRENT ( -250µ 100 125 T , JUNCTION TEMPERATURE (°C) J with Temperature. NDS336P Rev. D 150 ...

Page 5

... BODY DIODE FORWARD VOLTAGE (V) SD with Source Current and . Temperature V = -5V DS -10V -15V GATE CHARGE (nC off t t d(off PULSE WIDTH Figure 12. Switching Waveforms. 1 INVERTED NDS336P Rev. D ...

Page 6

... A 0 DRAIN-SOURCE VOLTAGE (V) DS 4.5"x5" FR-4 Board Still Air V = -2.7V GS 0.1 0.2 0.3 2 2oz COPPER MOUNTING PAD AREA ( ( See Note 1b JA P(pk ( Duty Cycle 100 20 30 0.4 . 300 NDS336P Rev. D ...

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