GS820E32T GSI Technology, GS820E32T Datasheet - Page 14

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GS820E32T

Manufacturer Part Number
GS820E32T
Description
64K x 32 / 2M Synchronous Burst SRAM
Manufacturer
GSI Technology
Datasheet
Rev: 1.03 2/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
DQ
Write Cycle Timing
A
B
ADSC
ADSP
A
- DQ
A
ADV
0
- B
GW
BW
-An
CK
E
E
E
G
D
D
1
2
3
Hi-Z
Single Write
tS tH
tS tH
tS tH
tS tH
tS tH
WR1
tS tH
ADV must be inactive for ADSP Write
tS tH
tS tH
tS tH
tS tH
tS tH
WR1
WR1
D1
A
E
2
and E
WR2
t
KH
3
Write specified byte for 2
14/23
only sampled with ADSP or ADSC
t
KL
WR2
WR2
Burst Write
D2
A
tKC
D2
ADSP is blocked by E
E
B
1
masks ADSP
D2
GS820E32T/Q-150/138/133/117/100/66
A
and all bytes for 2
C
D2
D
Write
ADSC initiated write
1
inactive
WR3
WR3
WR3
D3
B
© 1999, Giga Semiconductor, Inc.
, 2
A
Deselected with E
C
& 2
D
Deselected
2
D

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