HYS64D16000GDL-6-B Infineon, HYS64D16000GDL-6-B Datasheet - Page 8

• Manufacturer Part Number: HYS64D16000GDL-6-B
• Description: 200-Pin Small Outline Dual-In-Line Memory Modules
• Manufacturer: Infineon

2
Table 3
Symbol
A0 - A12
BA0, BA1
DQ0 - DQ63
RAS, CAS, WE
CKE0 - CKE1
DQS0 - DQS7
CK0 - CK1,
CK0 - CK1
DM0 - DM8
S0, S1
V
V
V
V
V
V
SCL
SDA
SA0 - SA2
NC
NU
1) I: Input; O: Output; I/O: bidirectional In-/Output; AI: Analog Input; PWR: Power Supply; GND: Signal Ground; NC: Not
2) CKE1 and S1 are used on two bank modules only
Table 4
Density
128MB
256MB
Data Sheet
DD
SS
DDQ
DDID
REF
DDSPD
Connected; NU: Not Usable
2)
Organization
16M
32M
Pin Configuration
Pin Definitions and Functions
Address Format
64
64
Memory
Ranks
1
2
Type
I
I
I/O
I
I
I/O
I
I
I
I
PWR
GND
PWR
PWR
AI
PWR
I
I/O
I
NC
NU
1)
SDRAMs
16M
16M
16
16
Function
Address Inputs
Bank Address
Data Input/Output
Command Input
Clock Enable
SDRAM Data Strobe
SDRAM Clock (true signal)
SDRAM Clock (complementary signal)
Data Mask
Chip Select
Power (+ 2.5 V)
Ground
I/O Driver power supply
VDD Indentification flag
I/O reference supply
Serial EEPROM power supply
Serial bus clock
Serial bus data line
slave address select
Not Connected
Not Usable, reserved for future use
# of
SDRAMs
4
8
8
HYS64D[1600x/32020]GDL–[5/6/7/8]–B
# of row/bank/
columns bits
13/2/9
13/2/9
Small Outline DDR SDRAM Modules
Refresh
8K
8K
Period
64 ms
64 ms
Pin Configuration
V1.2, 2003-08
Interval
7.8 s
7.8 s