HYS64D128021HBDL-5-B Infineon, HYS64D128021HBDL-5-B Datasheet - Page 18
![no-image](/images/no-image-200.jpg)
HYS64D128021HBDL-5-B
Manufacturer Part Number
HYS64D128021HBDL-5-B
Description
200-Pin Small Outline Dual-In-Line Memory Modules
Manufacturer
Infineon
Datasheet
1.HYS64D128021HBDL-5-B.pdf
(23 pages)
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9) The maximum limit for this parameter is not a device limit. The device operates with a greater value for this parameter, but
10) Fast slew rate ≥ 1.0 V/ns , slow slew rate ≥ 0.5 V/ns and < 1 V/ns for command/address and CK & CK slew rate > 1.0 V/
11) For each of the terms, if not already an integer, round to the next highest integer.
12) A maximum of eight Autorefresh commands can be posted to any given DDR SDRAM device.
Data Sheet
system performance (bus turnaround) degrades accordingly.
ns, measured between
cycle time.
V
OH(ac)
and
V
OL(ac)
.
18
Small Outline DDR SDRAM Modules
HYS64D128021[H/G]BDL–[5/6]–B
t
CK
is equal to the actual system clock
Electrical Characteristics
Rev. 0.5, 2003-12
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