HYS64D128020GU-7-A Infineon, HYS64D128020GU-7-A Datasheet - Page 13

• Manufacturer Part Number: HYS64D128020GU-7-A
• Description: 2.5 V 184-pin Unbuffered DDR-I SDRAM Modules
• Manufacturer: Infineon

INFINEON Technologies
Electrical Characteristics & AC Timing for DDR-I components
(for reference only)
(0 C
Symbol
t
t
t
t
t
DQSCK
t
DQSL,H
WPRES
t
t
t
t
DQSQ
t
t
WPRE
t
DQSS
t
t
WPST
RPRE
t
DIPW
RPST
t
t
t
MRD
t
t
t
t
t
t
t
t
QHS
DSS
DSH
RAS
IPW
t
t
t
CH
DH
QH
RC
AC
HP
CK
CK
DS
HZ
CL
LZ
IS
IH
T
A
DQ output access time from CK/CK
DQS output access time from CK/CK
CK high-level width
CK low-level width
Clock Half Period
Clock cycle time
DQ and DM input hold time
DQ and DM input setup time
Control and Addr. input pulse width (each
input)
DQ and DM input pulse width (each input)
Data-out high-impedence time from CK/CK
Data-out low-impedence time from CK/CK
Write command to 1st DQS latching transition
DQS-DQ skew
(for DQS & associated DQ signals)
Data hold skew factor
Data Output hold time from DQS
DQS input low (high) pulse width (write cycle)
DQS falling edge to CK setup time (write
cycle)
DQS falling edge hold time from CK (write
cycle)
Mode register set command cycle time
Write preamble setup time
Write postamble
Write preamble
Address and control
input setup time
Address and control
input hold time
Read preamble
Read postamble
Active to Precharge command
Active to Active/Auto-refresh command period
70 C V
DDQ
= 2.5V
Parameter
CL = 2.5
CL = 2.0
slow slew rate
slow slew rate
0.2V; V
fast slew rate
fast slew rate
DD
= 2.5V
t
+ 0.55 –
HP
0.45
0.75
0.75
0.45
0.45
0.45
1.75
0.75
0.35
0.40
0.25
0.40
Min
7.5
2.2
0.2
0.2
0.9
12
42
60
min (t
-t
0.2V)
0.7
0.7
0.7
0.7
6
0
DDR333
QHS
13
-6
CL,
Unbuffered DDR-I SDRAM-Modules
–
–
0.55
0.55
t
1.25
0.60
Max
HYS64/72D64000/128020GU-7/8-A
CH)
12
12
0.7
0.7
0.7
0.7
0.4
t
HP
0.45
0.45
1.75
0.75
0.35
0.40
0.25
0.40
Min
7.5
0.5
0.5
2.2
0.2
0.2
0.9
1.0
0.9
1.0
0.9
0.75
0.75
0.75
0.75
14
45
65
min (t
-t
7
0
DDR266A
QHS
-7
CL,
120,000
+ 0.75
0.55
0.55
t
1.25
0.60
0.60
Max
CH)
1.1
0.75
0.75
12
12
0.75
0.75
0.5
t
HP
0.45
0.45
0.75
0.35
0.40
0.25
0.40
Min
0.6
0.6
2.5
0.2
0.2
1.1
1.1
1.1
1.1
0.9
10
16
50
min (t
70
-t
0.8
0.8
8
2
0.8
0.8
0
2002-09-10 (rev.0.81)
DDR200
QHS
-8
CL,
120,000
+ 1.0
0.55
0.55
t
1.25
0.60
0.60
Max
CH)
1.1
12
12
0.8
0.8
0.8
0.8
0.6
Unit
t
t
t
t
t
t
t
t
t
t
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
Notes
1-4, 5
1-4, 5
1-4, 7
1-4, 6
10,11
1, 10
1-4,
2-4,
1-4
1-4
1-4
1-4
1-4
1-4
1-4
1-4
1-4
1-4
1-4
1-4
1-4
1-4
1-4
1-4
1-4
1-4
1-4
1-4
1-4
1-4
11