ISPLSI5256VA-125LB208 Lattice Semiconductor, ISPLSI5256VA-125LB208 Datasheet - Page 10
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ISPLSI5256VA-125LB208
Manufacturer Part Number
ISPLSI5256VA-125LB208
Description
In-System Programmable 3.3V SuperWIDE High Density PLD
Manufacturer
Lattice Semiconductor
Datasheet
1.ISPLSI5256VA-125LB208.pdf
(25 pages)
Supply Voltage V
Input Voltage Applied ............................... -0.5 to +5.6V
Tri-Stated Output Voltage Applied ........... -0.5 to +5.6V
Storage Temperature ................................ -65 to 150 C
Case Temp. with Power Applied .............. -55 to 125 C
Max. Junction Temp. (T
1. Stresses above those listed under the “Absolute Maximum Ratings” may cause permanent damage to the device. Functional
2. Compliance with the Thermal Management section of the Lattice Semiconductor Data Book or CD-ROM is a requirement.
Absolute Maximum Ratings
DC Recommended Operating Condition
V
V
Capacitance (T
C
C
C
Erase Reprogram Specification
ispLSI Erase/Reprogram Cycles
operation of the device at these or at any other conditions above those indicated in the operational sections of this specification
is not implied (while programming, follow the programming specifications).
1
2
3
CC
CCIO
SYMBOL
SYMBOL
I/O Capacitance
Clock Capacitance
Global Input Capacitance
cc
PARAMETER
.................................. -0.5 to +5.4V
A
Supply Voltage
I/O Reference Voltage
=25 C,f=1.0 MHz)
J
) with Power Applied ... 150 C
PARAMETER
PARAMETER
1, 2
Commercial
Industrial
10
MINIMUM
10000
T
T
Specifications ispLSI 5256VA
A
A
= 0 C to +70 C
= -40 C to +85 C
TYPICAL
10
10
10
MAXIMUM
UNITS
–
pf
pf
pf
MIN.
3.00
3.00
2.3
V = 3.3V, V = 2.0V
V = 3.3V, V = 2.0V
V = 3.3V, V = 2.0V
CC
CC
CC
TEST CONDITIONS
MAX.
3.60
3.60
3.60
UNITS
Cycles
I/O
CK
G
Table 2 - 0005/5256
Table 2 - 0006/5384
Table 2-0008/3320
UNITS
V
V
V