2SK3532 Fuji, 2SK3532 Datasheet - Page 3

• Manufacturer Part Number: 2SK3532
• Description: N Channel Silicon Power MOSFET
• Manufacturer: Fuji

2SK3532-01MR
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
10
10
10
10
10
10
10
10
3
2
1
0
-1
-2
-3
1
0
10
-50
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250 A
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=600V,VGS=10V,RG=10
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
-1
-25
td(off)
td(on)
10
tr
tf
0
0
25
10
VDS [V]
ID [A]
0
10
Tch [ C]
50
1
min.
max.
75
100
10
2
125
10
Ciss
Coss
Crss
1
150
800
600
400
200
0.1
10
14
12
10
1
8
6
4
2
0
0.00
0
0
0
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80 s pulse test,Tch=25 C
Typical Gate Charge Characteristics
VGS=f(Qg):ID=6A,Tch=25 C
Maximum Avalanche Energy vs. starting Tch
E(AS)=f(starting Tch):Vcc=90V
I
I
I
AS
AS
AS
=6A
=2A
=4A
0.25
5
25
10
0.50
50
starting Tch [ C]
FUJI POWER MOSFET
15
Vcc= 180V
VSD [V]
720V
Qg [nC]
0.75
450V
75
20
1.00
100
25
1.25
125
30
1.50
150
35
3