2SK3532 Fuji, 2SK3532 Datasheet

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2SK3532

Manufacturer Part Number
2SK3532
Description
N Channel Silicon Power MOSFET
Manufacturer
Fuji
Datasheet

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Part Number:
2SK3532
Manufacturer:
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Part Number:
2SK3532-01MR
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2SK3532-01MR
Super FAP-G Series
*1 L=12.4mH, Vcc=90V, Tch=25°C See to Avalanche Energy Graph
FUJI POWER MOSFET
*3 I
Thermalcharacteristics
Item
Thermal resistance
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
Turn-off time t
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Repetitive or non-repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
Operating and storage
temperature range
Isolation Voltage
Item
Maximum ratings and characteristic
(Tc=25°C unless otherwise specified)
Electrical characteristics (T
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
F
= <
-I
D
, -di/dt=50A/µs, Vcc BV
off
on
= <
DSS
c
=25°C unless otherwise specified)
, Tch 150°C
V
V
I
I
V
I
E
dV
dV/dt
P
T
T
V
D
D(puls]
AR
Symbol
ch
stg
DSX *5
AS
D
ISO
DS
GS
DS
R
R
Symbol
= <
Symbol
V
V
I
R
g
C
C
C
td
t
td
t
Q
Q
Q
I
V
t
Q
GSS
AV
th(ch-c)
th(ch-a)
Ta=25 °C
Tc=25 °C
f
I
r
rr
/dt
fs
GS(th)
DSS
(BR)DSS
DS(on)
iss
oss
rss
G
GS
SD
GD
rr
(on)
(off)
*6
*1
*4
*2
*3
*4 VDS 900V *5 V
Absolute maximum ratings
Ratings
-55 to +150
Test Conditions
Test Conditions
I
I
V
V
f=1MHz
V
I
V
L=12.4mH T
I
I
-di/dt=100A/µs
V
V
R
D
D
V
V
V
D
F
F
I
I
channel to ambient
channel to case
<
D
D
=
DS
GS
CC
GS
=6A V
=6A V
+150
= 250 µ A
= 250 µ A
CC
GS
GS
=6A
DS
DS
GS
=3A
=3A
900
900
±24
±30
244
=25V
=0V
=450V
=10V
=10
±6
40
70
=900V V
=720V V
=600V I
=10V
=±30V
6
5
2.16
2
GS
V
GS
N-CHANNEL SILICON POWER MOSFET
V
GS
DS
*2 Tch 150°C
=0V T
=0V
V
ch
D
=10V
=25V
DS
V
V
=25°C
GS
GS
GS
=3A
GS
DS
=0V
=0V
=0V
=-30V *6 t=60sec, f=60Hz
T
= <
=V
=0V
ch
ch
=25°C
=25°C
GS
Unit
kV/µs
kV/µs
W
°C
°C
kVrms
mJ
V
V
A
A
V
A
T
T
ch
ch
=25°C
=125°C
TO-220F
Outline Drawings [mm]
Equivalent circuit schematic
Gate(G)
Min.
Min.
900
3.0
3.7
6
Typ.
Typ.
750
100
21
42
21.5
11
1.92
7.4
7
8
3
7
0.90
1.1
5.5
Source(S)
Drain(D)
1125
Max.
250
100
150
58.0
Max.
25
32
12
63
16.5
32
10.5
11
1.560
5.0
2.50
4.5
1.50
Units
Units
200304
°C/W
°C/W
ns
V
V
µA
nA
S
pF
nC
A
V
µs
µC
1

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2SK3532 Summary of contents

Page 1

... FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic (Tc=25°C unless otherwise specified) Item Symbol Drain-source voltage DSX *5 ...

Page 2

... Characteristics Allowable Power Dissipation PD=f(Tc) 100 Typical Transfer Characteristic ID=f(VGS):80 s pulse test,VDS=25V,Tch= 0 VGS[V] Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 s pulse test,Tch=25 C 2.6 6.0V VGS=5.5V 2.5 2.4 2.3 2.2 2.1 2.0 1.9 1 [A] Typical Output Characteristics ID=f(VDS):80 s pulse test,Tch=25 C ...

Page 3

... Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250 A 7.0 6.5 6.0 5.5 max. 5.0 4.5 4.0 3.5 3.0 min. 2.5 2.0 1.5 1.0 0.5 0.0 -50 - Tch [ C] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz VDS [V] Typical Switching Characteristics vs. ID t=f(ID):Vcc=600V,VGS=10V,RG= td(off) td(on [A] ...

Page 4

... Maximum Avalanche Current Pulsewidth I =f(t ):starting Tch=25 C,Vcc=90V Single Pulse Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D http://www.fujielectric.co.jp/denshi/scd [sec ...

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