2SK3532 Fuji, 2SK3532 Datasheet - Page 2

• Manufacturer Part Number: 2SK3532
• Description: N Channel Silicon Power MOSFET
• Manufacturer: Fuji

2SK3532-01MR
Characteristics
100
2.6
2.5
2.4
2.3
2.2
2.1
2.0
1.9
1.8
80
60
40
20
0.1
10
0
1
0
0
0
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80
Allowable Power Dissipation
PD=f(Tc)
Typical Transfer Characteristic
ID=f(VGS):80 s pulse test,VDS=25V,Tch=25 C
1
VGS=5.5V
25
2
2
3
50
4
4
VGS[V]
Tc [ C]
ID [A]
75
5
s pulse test,Tch=25 C
6.0V
6
6
100
6.5V
7
8
8
7.0V
125
8.0V
10V
20V
9
150
10
10
10
7
6
5
4
3
2
1
0
8
6
4
2
0
1
0
-50
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=3A,VGS=10V
Typical Output Characteristics
ID=f(VDS):80 s pulse test,Tch=25 C
Typical Transconductance
gfs=f(ID):80 s pulse test,VDS=25V,Tch=25 C
0.1
-25
5
0
FUJI POWER MOSFET
25
max.
VDS [V]
10
Tch [ C]
ID [A]
50
1
typ.
75
15
100
20V
VGS=5.5V
125
6.5V
20
10V
8.0V
7.0V
6.0V
150
10
2