MC9S12E Motorola, MC9S12E Datasheet - Page 108

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MC9S12E

Manufacturer Part Number
MC9S12E
Description
MC9S12E-Family Device User Guide V01.04
Manufacturer
Motorola
Datasheet

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Device User Guide — 9S12E128DGV1/D V01.04
A.1.6 ESD Protection and Latch-up Immunity
All ESD testing is in conformity with CDF-AEC-Q100 Stress test qualification for Automotive Grade
Integrated Circuits. During the device qualification ESD stresses were performed for the Human Body
Model (HBM), the Machine Model (MM) and the Charge Device Model.
A device will be defined as a failure if after exposure to ESD pulses the device no longer meets the device
specification. Complete DC parametric and functional testing is performed per the applicable device
specification at room temperature followed by hot temperature, unless specified otherwise in the device
specification.
A.1.7 Operating Conditions
This chapter describes the operating conditions of the device. Unless otherwise noted those conditions
apply to all the following data.
108
Num
1
2
3
4
5
Human Body
Machine
Latch-up
Model
C
C
C
C
C
C
Human Body Model (HBM)
Machine Model (MM)
Charge Device Model (CDM)
Latch-up Current at 125°C
positive
negative
Latch-up Current at 27°C
positive
negative
Table A-3 ESD and Latch-Up Protection Characteristics
Series Resistance
Storage Capacitance
Number of Pulse per pin
positive
negative
Series Resistance
Storage Capacitance
Number of Pulse per pin
positive
negative
Minimum input voltage limit
Maximum input voltage limit
Table A-2 ESD and Latch-up Test Conditions
Freescale Semiconductor, Inc.
For More Information On This Product,
Rating
Description
Go to: www.freescale.com
Symbol
V
V
V
I
I
HBM
CDM
LAT
LAT
MM
Symbol
R1
R1
C
C
-
-
+100
+200
2000
-100
-200
Min
200
500
Value
1500
100
200
-2.5
7.5
3
3
0
3
3
-
-
Max
-
-
-
-
-
Unit
Ohm
Ohm
pF
pF
V
V
Unit
mA
mA
V
V
V

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