TC58FVM7B2 Toshiba Semiconductor, TC58FVM7B2 Datasheet - Page 23

• Manufacturer Part Number: TC58FVM7B2
• Description: 128-MBIT (16M X 8 BITS / 8M X 16 BITS) CMOS FLASH MEMORY
• Manufacturer: Toshiba Semiconductor

AC CHARACTERISTICS AND OPERATING CONDITIONS
t
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t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
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t
t
Symbol
Symbol
RC
PRC
ACC
CE
OE
PACC
CEE
OEE
OH
DF1
DF2
RC
PRC
ACC
CE
OE
PACC
CEE
OEE
OH
DF1
DF2
Product name
VDD voltage (V)
Output load capacitance (CL)
Read Cycle Time
Page Read Cycle Time
Address Access Time
Page Access Time
Output Data Hold Time
Product name
VDD voltage (V)
Output load capacitance (CL)
Read Cycle Time
Page Read Cycle Time
Address Access Time
Page Access Time
Output Data Hold Time
CE Access Time
OE Access Time
CE to Output Low-Z
OE to Output Low-Z
CE to Output High-Z
OE to Output High-Z
CE Access Time
OE Access Time
CE to Output Low-Z
OE to Output Low-Z
CE to Output High-Z
OE to Output High-Z
Parameter
Parameter
Min
Min
65
25
80
30
0
0
0
0
0
0
30 pF
30 pF
VDD=2.7-3.6V
VDD=2.7-3.6V
Max
Max
65
65
25
25
25
25
80
80
30
30
25
25
TC58FVM7T2ATG65 , TC58FVM7B2ATG65
TC58FVM7T2ATG80 , TC58FVM7B2ATG80
Min
Min
70
30
85
35
0
0
0
0
0
0
100 pF
100 pF
TC58FVM7(T/B)2AFT(65/80)
Max
Max
70
70
30
30
25
25
85
85
35
35
25
25
Min
Min
70
30
85
35
0
0
0
0
0
0
30 pF
30 pF
VDD=2.3-3.6V
VDD=2.3-3.6V
Max
Max
70
70
30
30
25
25
85
85
35
35
25
25
2002-10-24 23/68
Min
Min
75
35
90
40
0
0
0
0
0
0
100 pF
100 pF
Max
Max
75
75
35
35
25
25
90
90
40
40
25
25
Unit
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns