TC58FVM7B2 Toshiba Semiconductor, TC58FVM7B2 Datasheet - Page 10

• Manufacturer Part Number: TC58FVM7B2
• Description: 128-MBIT (16M X 8 BITS / 8M X 16 BITS) CMOS FLASH MEMORY
• Manufacturer: Toshiba Semiconductor

Auto-Program Mode
the Program command. The program address is latched on the falling edge of the WE signal and data is
latched on the rising edge of the fourth Bus Write cycle (with WE control). Auto programming starts on the
rising edge of the WE signal in the fourth Bus Write cycle. The Program and Program Verify commands are
automatically executed by the chip. The device status during programming is indicated by the Hardware
Sequence flag. To read the Hardware Sequence flag, specify the address to which the Write is being performed
cannot be accepted. To terminate execution, use a hardware reset. Note that if the Auto-Program operation is
terminated in this manner, the data written so far is invalid.
rising edge of the WE signal in the fourth Bus Write cycle.
return to Read Mode. The device status is indicated by the Hardware Sequence flag. Either a Reset command or
a hardware reset is required to return the device to Read Mode after a failure. If a programming operation fails,
the block which contains the address to which data could not be programmed should not be used.
cells which contain 0s. If this is attempted, execution of Auto Program will fail. This is a user error, not a device
error. A cell containing 0 must be erased in order to set it to 1.
Auto-Page Program Mode
input page program command during first bus write cycle to third bus write cycle. Input program data and
address of (A0,A1,A2)=(0,0,0) in forth bus write cycle. Input increment address and program data during fifth
bus write cycle to eleventh bus write cycle. After input eleventh bus write cycle , page program operation start.
In byte mode, input increment address and program data of (A-1,A0,A1,A2)=(0,0,0,0)--- (A-1,A0,A1,A2)=(1,1,1,1)
during fifth bus write cycle to nineteenth bus write cycle.
Fast Program Mode
completed in two cycles. In this mode the first two cycles of the command sequence, which normally requires
four cycles, are omitted. Writing is performed in the remaining two cycles. To execute Fast Program, input the
Fast Program command. Write in this mode uses the Fast Program command but operation is the same at that
for ordinary Auto-Program. The status of the device is indicated by the Hardware Sequence flag and read
operations can be performed as usual. To exit this mode, the Fast Program Reset command must be input.
When the command is input, the device will return to Read Mode.
Acceleration Mode
to WP or ACC automatically sets the device to Acceleration Mode. In Acceleration Mode, Block Protect Mode
changes to Temporary Block Unprotect Mode. Write Mode changes to Fast Program Mode. Modes are switched
by the
Program Mode. Operation of Write is the same as in Auto-Program Mode. Removing V
terminates Acceleration Mode.
The TC58FVM7T2A/B2A can be programmed in either byte or word units. Auto-Program Mode is set using
During Auto Program execution, a command sequence for the bank on which execution is being performed
Any attempt to program a protected block is ignored. In this case the device enters Read Mode 3 s after the
If an Auto-Program operation fails, the device remains in the programming state and does not automatically
The device allows 0s to be programmed into memory cells which contain a 1. 1s cannot be programmed into
Auto-Page Program is a function which enables to simultaneously program 8words or 16bytes data.
In this mode Program time for 128M bit is less than 60% compare with Auto program mode. In word mode,
Fast Program is a function which enables execution of the command sequence for the Auto Program to be
The TC58FVM7T2A/B2A features Acceleration Mode which allows write time to be reduced. Applying V
WP
/ACC
signal; thus, there is no need for a Temporary Block Unprotect operation or to set or reset Fast
TC58FVM7(T/B)2AFT(65/80)
2002-10-24 10/68
ACC
from
WP
/ACC
ACC
.