TC58FVM7B2 Toshiba Semiconductor, TC58FVM7B2 Datasheet - Page 21

• Manufacturer Part Number: TC58FVM7B2
• Description: 128-MBIT (16M X 8 BITS / 8M X 16 BITS) CMOS FLASH MEMORY
• Manufacturer: Toshiba Semiconductor

ABSOLUTE MAXIMUM RATINGS
CAPACITANCE
RECOMMENDED DC OPERATING CONDITIONS
V
V
V
V
V
P
T
T
T
I
(1) Outputs should be shorted for no more than one second.
C
C
C
This parameter is periodically sampled and is not tested for every device.
V
V
V
V
V
Ta
(1)
(2)
(3) Do not apply VID/VACC when the supply voltage is not within the device's recommended operating voltage range.
OSHORT
solder
stg
opr
DD
IN
DQ
IDH
ACCH
D
IN
OUT
IN2
DD
IH
IL
ID
ACC
SYMBOL
SYMBOL
SYMBOL
No more than one output should be shorted at a time.
2 V (pulse width of 20 ns max)
2 V (pulse width of 20 ns max)
V
Input Voltage
Input/Output Voltage
Maximum Input Voltage for A9, OE and RESET
Maximum Input Voltage for
Power Dissipation
Soldering Temperature (10s)
Storage Temperature
Operating Temperature
Output Short-Circuit Current
Input Pin Capacitance
Output Pin Capacitance
Control Pin Capacitance
V
Input High-Level Voltage
Input Low-Level Voltage
High-Level Voltage for A9, OE and RESET
High-Level Voltage for
Operating Temperature
DD
DD
Supply Voltage
Supply Voltage
(Ta
25°C, f
PARAMETER
WP
1 MHz)
/ACC
(1)
WP
PARAMETER
PARAMETER
/ACC
(3)
(3)
TC58FVM7(T/B)2AFT(65/80)
0.6~V
0.6~V
V
V
V
CONDITION
0.7
IN
OUT
IN
RANGE
DD
DD
0.6~4.6
55~150
40~85
13.0
10.5
0.3
MIN
11.4
126
260
100
2.3
8.5
40
0 V
0 V
V
(1)
0.5 ( 4.6)
0.5 ( 4.6)
0 V
DD
V
0.2
DD
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MAX
MAX
12.6
3.6
9.5
85
8
5
7
0.3
V
DD
(2)
UNIT
UNIT
UNIT
mW
mA
pF
pF
pF
V
V
V
V
V
V
C
C
C
C