M27C160-100B1TR STMicroelectronics, M27C160-100B1TR Datasheet - Page 5
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M27C160-100B1TR
Manufacturer Part Number
M27C160-100B1TR
Description
16 Mbit 2Mb x8 or 1Mb x16 UV EPROM and OTP EPROM
Manufacturer
STMicroelectronics
Datasheet
1.M27C160-100B1TR.pdf
(16 pages)
Table 7. Read Mode DC Characteristics
(T
Note: 1. V
System Considerations
The power switching characteristics of Advanced
CMOS EPROMs require carefull decoupliing of
the supplies to the devices. The supply current I
has three segments of importance to the system
designer: the standby current, the active current
and the transient peaks that are produced by the
falling and rising edges of E.
The magnitude of the transient current peaks is
dependant on the capacititive and inductive load-
ing of the device outputs. The associated transient
voltage peaks can be supressed by complying
with the two line output control and by properly se-
lected decoupling capacitors. It is recommended
that a 0.1 F ceramic capacitor is used on every
device between V
high frequency type of low inherent inductance
and should be placed as close as possible to the
device. In addition, a 4.7 F electrolytic capacitor
should be used between V
eight devices.
Symbol
A
V
I
I
V
V
I
I
CC1
CC2
I
V
IH
= 0 to 70 C or –40 to 85 C; V
I
CC
LO
PP
OL
OH
LI
2. Maximum DC voltage on Output is V
IL
(2)
CC
must be applied simultaneously with or before V
Input Leakage Current
Output Leakage Current
Supply Current
Supply Current (Standby) TTL
Supply Current (Standby) CMOS
Program Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage TTL
CC
Parameter
and V
CC
SS
. This should be a
and V
CC
CC
+0.5V.
SS
= 5V
for every
(1)
5% or 5V
PP
CC
and removed simultaneously or after V
I
I
OUT
OUT
0V
E = V
E = V
Test Condition
0V
E > V
I
OH
I
= 0mA, f = 8MHz
= 0mA, f = 5MHz
OL
V
This capacitor should be mounted near the power
supply connection point. The purpose of this ca-
pacitor is to overcome the voltage drop caused by
the inductive effects of PCB traces.
Programming
When delivered (and after each erasure for UV
EPROM), all bits of the M27C160 are in the ’1’
state. Data is introduced by selectively program-
ming ’0’s into the desired bit locations. Although
only ’0’s will be programmed, both ’1’s and ’0’s can
be present in the data word. The only way to
change a ’0’ to a ’1’ is by die exposition to ultravio-
let light (UV EPROM). The M27C160 is in the pro-
gramming mode when V
at V
grammed is applied to 16 bits in parallel to the data
output pins. The levels required for the address
and data inputs are TTL. V
6.25V
PP
E = V
V
= –400 A
IL
IL
V
= 2.1mA
10%; V
CC
OUT
, G = V
, G = V
IN
= V
IH
– 0.2V
IH
CC
and E is pulsed to V
V
V
0.25V.
CC
CC
PP
IL
IL
,
,
= V
CC
)
PP
–0.3
Min
2.4
PP
2
.
IL
input is at 12.5V, G is
CC
. The data to be pro-
is specified to be
V
CC
Max
100
0.8
0.4
70
50
10
10
1
1
+ 1
M27C160
Unit
mA
mA
mA
V
V
V
V
A
A
A
A
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