M27C160-100B1TR STMicroelectronics, M27C160-100B1TR Datasheet - Page 4

• Manufacturer Part Number: M27C160-100B1TR
• Description: 16 Mbit 2Mb x8 or 1Mb x16 UV EPROM and OTP EPROM
• Manufacturer: STMicroelectronics

M27C160
Table 5. AC Measurement Conditions
Figure 3. Testing Input Output Waveform
Table 6. Capacitance
Note: 1. Sampled only, not 100% tested.
Standby Mode
The M27C160 has a standby mode which reduces
the active current from 50mA to 100 A. The
M27C160 is placed in the standby mode by apply-
ing a CMOS high signal to the E input. When in the
standby mode, the outputs are in a high imped-
ance state, independent of the G input.
Two Line Output Control
Because EPROMs are usually used in larger
memory arrays, this product features a 2 line con-
trol function which accommodates the use of mul-
tiple memory connection. The two line control
function allows:
4/16
Input Rise and Fall Times
Input Pulse Voltages
Input and Output Timing Ref. Voltages
High Speed
Standard
Symbol
2.4V
0.4V
C
3V
0V
C
OUT
IN
Input Capacitance (except BYTEV
Input Capacitance (BYTEV
Output Capacitance
(1)
(T
A
= 25 C, f = 1 MHz)
Parameter
PP
1.5V
2.0V
0.8V
AI01822
)
PP
)
High Speed
0 to 3V
1.5V
Figure 4. AC Testing Load Circuit
a. the lowest possible memory power dissipation,
b. complete assurance that output bus contention
For the most efficient use of these two control
lines, E should be decoded and used as the prima-
ry device selecting function, while G should be
made a common connection to all devices in the
array and connected to the READ line from the
system control bus. This ensures that all deselect-
ed memory devices are in their low power standby
mode and that the output pins are only active
when data is required from a particular memory
device.
10ns
Test Condition
will not occur.
C L = 30pF for High Speed
C L = 100pF for Standard
C L includes JIG capacitance
V
DEVICE
UNDER
V
V
OUT
TEST
IN
IN
= 0V
= 0V
= 0V
1.3V
Min
1N914
3.3k
0.4V to 2.4V
0.8V and 2V
C L
Standard
20ns
Max
120
10
12
OUT
AI01823B
Unit
pF
pF
pF