LH28F004SU-LC Sharp Electrionic Components, LH28F004SU-LC Datasheet - Page 20
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LH28F004SU-LC
Manufacturer Part Number
LH28F004SU-LC
Description
4M (512K bb 8) Flash Memory
Manufacturer
Sharp Electrionic Components
Datasheet
1.LH28F004SU-LC.pdf
(31 pages)
LH28F004SU-LC
DC Characteristics
20
SYMBOL
V
I
I
I
I
I
I
CCR
CCR
I
CCES
I
I
CCW
CCS
CCD
CCE
I
PPS
PPD
CC
I
LO
IL
1
2
= 3.3 V ± 0.3 V, T
Input Load Current
Output Leakage Current
V
V
Current
V
V
V
V
V
Current
V
V
Current
CC
CC
CC
CC
CC
CC
CC
PP
PP
Standby Current
Deep Power-Down
Block Erase Current
Standby Current
Deep Power-Down
Read Current
Read Current
Write Current
Erase Suspend
PARAMETER
A
= 0°C to +70°C
TYP.
0.3
0.2
0.2
4
9
5
6
3
MIN.
MAX.
±10
±10
±1
35
20
12
12
8
4
5
6
5
UNITS
mA
mA
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
V
CE
V
CE
RP
V
CMOS: CE
Inputs = GND ±0.2 V or V
TTL: CE
Inputs = V
f = 8 MHz, I
V
CMOS: CE
Inputs = GND ±0.2 V or V
TTL: CE
Inputs = V
f = 4 MHz, I
Byte/Two-Byte Serial Write
in Progress
CE
Block Erase Suspended
RP
V
V
Block Erase in Progress
V
CC
CC
CC
CC
CC
CC
PP
»
, RP
»
, RP
»
»
»
= GND ±0.2 V
= V
= GND ±0.2 V
= V
= V
= V
= V
= V
= V
V
IH
CC
»
»
CC
CC
CC
CC
CC
CC
TEST CONDITIONS
»
»
= V
= V
= V
= V
IL
IL
»
»
MAX., V
MAX., V
MAX.,
MAX.,
MAX.,
MAX.,
OUT
OUT
= GND ±0.2 V
= GND ±0.2 V
CC
IH
or V
or V
IL,
IL,
4M (512K × 8) Flash Memory
±0.2 V
= 0 mA
= 0 mA
IH
IH
,
,
IN
IN
= V
= V
CC
CC
CC
CC
or GND
or GND
±0.2 V,
±0.2 V,
1, 3, 4
1, 3, 4
NOTE
1, 2
1,4
1
1
1
1
1
1
1