ADG725 Analog Devices, ADG725 Datasheet - Page 2

• Manufacturer Part Number: ADG725
• Description: 16-/32- Channel/ Serially Controlled 4 1.8 V to 5.5 V/ 2.5 V/ Analog Multiplexers
• Manufacturer: Analog Devices

ADG725/ADG731–SPECIFICATIONS
Parameter
ANALOG SWITCH
LEAKAGE CURRENTS
DIGITAL INPUTS
DYNAMIC CHARACTERISTICS
POWER REQUIREMENTS
NOTES
1
2
Specifications subject to change without notice.
Temperature range is as follows: B Version: –40°C to +85°C.
Guaranteed by design, not subject to production test.
Analog Signal Range
On-Resistance (R
On-Resistance Match Between
Channels ( R
On-Resistance Flatness (R
Source OFF Leakage I
Drain OFF Leakage I
Channel ON Leakage I
Input High Voltage, V
Input Low Voltage, V
Input Current
C
t
Break-Before-Make Time Delay, t
Charge Injection
Off Isolation
Channel to Channel Crosstalk
-3 dB Bandwidth
C
C
C
I
TRANSITION
DD
IN
S
D
D
ADG725
ADG731
ADG725
ADG726
I
ADG725
ADG731
, C
INL
, Digital Input Capacitance
(OFF)
(OFF)
ADG725
ADG731
ADG725
ADG731
S
or I
(ON)
INH
ON
)
ON
)
INL
INH
D
D
S
, I
(OFF)
(OFF)
FLAT(ON)
PRELIMINARY TECHNICAL DATA
S
(ON)
)
2
D
+25
4
5.5
0.5
±0.01
±0.25
±0.05
±0.5
± 1
±0.05
±0.5
± 1
0.005
5
40
30
± 5
-60
-60
34
18
13
180
360
200
400
10
o
C
B Version
0 V to V
–40°C
to +85°C
6
0.3
0.8
1
±0.5
±2.5
± 5
±2.5
± 5
2.4
0.8
±0.1
60
1
20
–2–
DD
1
(V
DD
Units
V
nA typ
nA max
nA typ
nA max
nA max
nA typ
nA max
nA max
V min
V max
µA typ
µA max
pF typ
ns typ
ns max
ns typ
ns min
pC typ
dB typ
dB typ
MHz typ
MHz typ
pF typ
pF typ
pF typ
pF typ
pF typ
µA typ
µA max
= 5V ± 10%, V
typ
typ
typ
max
max
max
V
Test Circuit 1
V
V
V
V
Test Circuit 2
V
Test Circuit 3
V
Test Circuit 4
V
R
V
R
V
V
Test Circuit 7
R
Test Circuit 8
R
Test Circuit 9
R
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 1 MHz
V
Digital Inputs = 0 V or +5.5 V
Test Conditions/Comments
SS
S
S
S
DD
D
D
D
IN
L
S1
L
S
S
L
L
L
DD
= 0 V to V
= 0 V to V
= 0V, GND = 0 V, unless otherwise noted)
= 0 V to V
= 0 V, R
= 300
= 3 V, Test Circuit 6
= 50
= 50
= V
= 300
= 50
= 4.5 V/1 V, V
= 4.5 V/1 V, V
= V
= 3 V/0 V, V
= 5.5 V
= +5.5 V
S
INL
= 1 V, or 4.5V;
, C
, C
, C
or V
, C
S
, C
DD
= 0
DD
DD
L
L
L
L
INH
L
= 5 pF, f = 100 kHz;
= 5 pF, f = 100 kHz;
= 5 pF, Test Circuit 10
, I
, I
, I
S32
= 35 pF;
= 35 pF,Test Circuit 5;
DS
DS
S
S
DS
= 0 V/3V
= 1 V/4.5 V;
= 1 V/4.5 V;
, C
= 10 mA
= 10 mA;
= 10 mA
L
= 1 nF;
REV. PrD