FM200TU-07A_09 MITSUBISHI [Mitsubishi Electric Semiconductor], FM200TU-07A_09 Datasheet - Page 3

• Manufacturer Part Number: FM200TU-07A_09
• Description: HIGH POWER SWITCHING USE INSULATED PACKAGE
• Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]

PERFORMANCE CURVES
200
160
120
2.5
1.5
0.5
1.0
0.8
0.6
0.4
0.2
80
40
0
2
1
0
0
0
0
0
V
15V
DRAIN-SOURCE VOLTAGE V
CHANNEL TEMPERATURE T
I
20V
GATE-SOURCE VOLTAGE V
T
GS
D
ch
VOLTAGE VS. TEMPERATURE
20
= 100A
OUTPUT CHARACTERISTICS
DRAIN-SOURCE ON-STATE
DRAIN-SOURCE ON-STATE
=
= 25°C
VOLTAGE VS. GATE BIAS
0.2
4
40
I
D
= 50A
10V
60
(TYPICAL)
12V
0.4
(TYPICAL)
(TYPICAL)
8
V
GS
80
= 12V
0.6
12
100
V
GS
T
120
ch
= 15V
I
I
D
D
0.8
16
= 25°C
= 200A
= 100A
ch
GS
DS
140
(°C)
Chip
Chip
Chip
(V)
(V)
9V
160
1.0
20
200
150
100
10
10
10
50
0
7
6
5
4
3
2
1
0
7
5
3
2
7
5
3
2
10
2
1
0
5
0
–1
V
CHANNEL TEMPERATURE T
V
DRAIN-SOURCE VOLTAGE V
V
I
T
GATE-SOURCE VOLTAGE V
D
DS
TRANSFER CHARACTERISTICS
GS
ch
DS
2
VOLTAGE VS. TEMPERATURE
20
= 10mA
= 125°C
DRAIN-SOURCE VOLTAGE
= 10V
3 5 7
= 0V
= 10V
7
40
HIGH POWER SWITCHING USE
GATE THRESHOLD
CAPACITANCE VS.
10
60
(TYPICAL)
(TYPICAL)
(TYPICAL)
0
9
2
T
80
3 5 7
ch
INSULATED PACKAGE
FM200TU-07A
= 25°C
11
100
10
1
120
2
13
GS
ch
3 5 7
DS
140
(°C)
Chip
(V)
C
C
C
(V)
oss
iss
rss
160
15
10
2
May 2006