FM200TU-07A_09 MITSUBISHI [Mitsubishi Electric Semiconductor], FM200TU-07A_09 Datasheet - Page 2

• Manufacturer Part Number: FM200TU-07A_09
• Description: HIGH POWER SWITCHING USE INSULATED PACKAGE
• Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]

ELECTRICAL CHARACTERISTICS
THERMISTOR PART
*
*
*
*
*
*
*
*
ABSOLUTE MAXIMUM RATINGS
5: T
6: B = (InR
7: T
8: Typical value is measured by using Shin-Etsu Chemical Co., Ltd “G-746”.
V
V
I
I
I
I
I
P
P
T
T
V
I
V
I
r
(chip)
V
(chip)
R
C
C
C
Q
t
t
t
t
t
Q
V
R
R
R
R
R
B*
1: It is characteristics of the anti-parallel, source to drain free-wheel diode (FWDi).
2: Pulse width and repetition rate should be such that the device channel temperature (T
3: T
4: Pulse width and repetition rate should be such as to cause negligible temperature rise.
D
DM
DA
S
SM
DSS
GSS
d(on)
r
d(off)
f
rr
DS(ON)
Symbol
Symbol
Symbol
ch
stg
DSS
GSS
D
D
iso
GS(th)
DS(ON)
(lead)
iss
oss
rss
SD
th(ch-c)
th(ch-c’)
th(c-f)
th(c’-f’)
TH
G
rr
*
*
6
1
1
*
*
*
*
TH
C
C
4
4
—
—
1
*
*
1
’ measured point is just under the chips. If use this value, R
1
6
measured point is shown in page OUTLINE DRAWING.
is thermistor temperature.
1
-InR
Drain-source voltage
Gate-source voltage
Drain current
Avalanche current
Source current
Maximum power dissipation
Channel temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Drain cutoff current
Gate-source threshold voltage
Gate leakage current
Static drain-source
On-state resistance
Static drain-source
On-state voltage
Lead resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Source-drain voltage
Thermal resistance
Contact thermal resistance
Resistance
B Constant
2
)/(1/T
1
-1/T
Parameter
2
Item
Item
)
R
1
: Resistance at T
(T
ch
(T
ch
= 25°C unless otherwise specified.)
G-S Short
D-S Short
T
Pulse*
L = 10µH Pulse*
Pulse*
T
T
Main terminal to base plate, AC 1 min.
Main Terminal M6
Mounting M6
Typical value
V
I
V
I
V
I
V
I
terminal-chip
V
V
V
V
R
I
I
MOSFET part (1/6 module)*
MOSFET part (1/6 module)*
Case to fin, Thermal grease Applied*
Case to fin, Thermal grease Applied*
T
Resistance at T
D
D
D
D
S
S
= 25°C unless otherwise specified.)
C
C
C
DS
GS
GS
GS
GS
DD
DD
TH
1
DS
G
= 100A
= 100A, V
(K), R
= 10mA, V
= 100A
= 100A
= 100A
’ = 144°C*
’ = 25°C*
= 25°C
= 13Ω, Inductive load switching operation
= 25°C*
= V
= V
= 15V
= 15V
= 10V
= 0V
= 48V, I
= 48V, I
2
2
2
DSS
GSS
: Resistance at T
3
, V
, V
D
D
GS
5
3
DS
GS
= 100A, V
= 100A, V
DS
th(f-a)
= 0V
TH
= 10V
2
= 0V
= 0V
= 25°C, 50°C*
should be measured just under the chips.
Conditions
Conditions
Conditions
2
GS
GS1
(K)
= 15V
7
3
= V
GS2
5
= 15V
ch
8
3,
) does not exceed T
(1/6 module)
*
8
(1/6 module)
T
T
T
T
T
T
ch
ch
ch
ch
ch
ch
= 25°C
= 25°C
= 25°C
= 125°C
= 125°C
= 125°C
HIGH POWER SWITCHING USE
ch
max rating.
Min.
Min.
4.7
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INSULATED PACKAGE
FM200TU-07A
–40 ~ +150
–40 ~ +125
3.5 ~ 4.5
3.5 ~ 4.5
Ratings
Limits
Limits
0.192
2500
4000
1.92
0.12
1.68
0.09
±20
100
200
100
100
200
410
560
600
Typ.
Typ.
700
100
1.2
1.2
2.0
0.1
75
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6
0.165
Max.
Max.
1.65
0.30
0.22
450
400
600
400
200
7.3
1.5
1.3
50
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1
7
4
May 2006
N • m
N • m
°C/W
Unit
Unit
Unit
mΩ
mΩ
mA
nC
µC
kΩ
µA
nF
°C
°C
ns
ns
W
W
V
V
A
A
A
A
A
V
g
V
V
V
K