F25L08PA-100DG ESMT [Elite Semiconductor Memory Technology Inc.], F25L08PA-100DG Datasheet - Page 26

no-image

F25L08PA-100DG

Manufacturer Part Number
F25L08PA-100DG
Description
3V Only 8 Mbit Serial Flash Memory with Dual
Manufacturer
ESMT [Elite Semiconductor Memory Technology Inc.]
Datasheet
ESMT
Table 14: Power-Up Timing and V
Note: These parameters are characterized only.
Elite Semiconductor Memory Technology Inc.
V
Time Delay before Write instruction
Write Inhibit Threshold Voltage
Figure 26: HOLD Timing Diagram
Figure 27: Power-Up Timing Diagram
CC
(min) to CE low
Parameter
V
V
CC
CC
(max)
(min)
V
WI
WI
V
CC
Threshold
Reset
State
Program, Erase and Write command is ignored
Symbol
T
CE must track V
T
V
PUW
VSL
WI
CC
Min.
200
1
T
T
VSL
PUW
Read command
is allowed
Max.
10
2
Device is fully
accessible
Unit
ms
us
Publication
V
Revision: 1.7
Time
F25L08PA
Date: Jul. 2009
26/32

Related parts for F25L08PA-100DG