M52S16161A-10TG ESMT [Elite Semiconductor Memory Technology Inc.], M52S16161A-10TG Datasheet - Page 6

• Manufacturer Part Number: M52S16161A-10TG
• Description: 512K x 16Bit x 2Banks Mobile Synchronous DRAM
• Manufacturer: ESMT [Elite Semiconductor Memory Technology Inc.]

ESMT
AC CHARACTERISTICS (AC operating conditions unless otherwise noted)
Note: 1.Parameters depend on programmed CAS latency.
Elite Semiconductor Memory Technology Inc.
CLK cycle time
CLK to valid
output delay
CLK to output in
Hi-Z
Output data hold time
CLK high pulse width
CLK low pulse width
Input setup time
Input hold time
CLK to output in Low-Z
2.If clock rising time is longer than 1ns,(tr/2-0.5)ns should be added to the parameter.
3.Assumed input rise and fall time (tr & tf)=1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered, i.e., [(tr+ tf)/2-1]ns should be added to the
parameter.
Parameter
CAS Latency =3
CAS Latency =2
CAS Latency =3
CAS Latency =2
CAS Latency =3
CAS Latency =2
Symbol
t
t
t
t
t
t
t
t
t
SAC
SHZ
SLZ
CC
OH
CH
SH
CL
SS
Min
2.5
15
8
3
3
3
1
1
-
-
-
-
-8
1000
Max
12
7
7
8
-
-
-
-
-
-
*All AC parameters are measured from half to half.
Min
2.5
10
15
3
3
3
1
1
-
-
-
-
-10
1000
Max
12
9
7
9
-
-
-
-
-
-
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
Revision : 1.6
Publication Date : May 2009
M52S16161A
Note
1
1
2
3
3
3
3
2
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