M52S16161A-10BG ESMT [Elite Semiconductor Memory Technology Inc.], M52S16161A-10BG Datasheet - Page 3

• Manufacturer Part Number: M52S16161A-10BG
• Description: 512K x 16Bit x 2Banks Synchronous DRAM
• Manufacturer: ESMT [Elite Semiconductor Memory Technology Inc.]

ESMT
ABSOLUTE MAXIMUM RATINGS
Note: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to V
Note : 1. ESMT can support VDDQ 2.5V (in general case) and 1.8V (in specific case) for VDD 2.5V products. Please contact
CAPACITANCE (V
Elite Semiconductor Memory Technology Inc.
DQ0 ~ 15
VDD/VSS
VDDQ/VSSQ
N.C/RFU
Voltage on any pin relative to V
Voltage on V
Storage temperature
Power dissipation
Short circuit current
Supply voltage
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current
Output leakage current
RAS , CAS , WE , CS , CKE, LDQM,
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
3.V
4.Any input 0V
5.Dout is disabled, 0V
2.V
to sales. Dept. when condisering the use fo VDDQ 1.8V (min 1.65V).
IL
Parameter
IH
(min) = -1.0V AC for pulse width
(max) = 4.6V AC for pulse width
DD
Parameter
DQ0 ~DQ15
supply relative to V
ADDRESS
Data Input / Output
Power Supply/Ground
Data Output Power/Ground
No Connection/
Reserved for Future Use
CLOCK
UDQM
Pin
≤
DD
V
= 2.5V, T
IN
≤
≤
SS
V
V
DDQ
OUT
SS
A
, all other pins are not under test = 0V.
Symbol
= 25
≤
V
V
V
V
V
V
I
DDQ
I
OL
OH
DD
OL
IL
IH
IL
V
DDQ
°
≤
≤
C
V
.
V
Symbol
Data inputs/outputs are multiplexed on the same pins.
Power and ground for the input buffers and the core logic.
Isolated power supply and ground for the output buffers to provide improved
noise immunity.
This pin is recommended to be left No Connection on the device.
3ns acceptable.
, f = 1MHz)
DD
3ns acceptable.
IN
T
I
P
,V
,V
STG
OS
Symbol
D
OUT
DDQ
C
C
C
0.8 x V
V
C
ADD
OUT
CLK
DDQ
IN
1.65
Min
-0.3
-10
-10
2.3
2.3
-
– 0.2
SS
DDQ
= 0V, T
A
= 0
Typ
-55 ~ + 150
2.5
2.5
-1.0 ~ 4.6
-1.0 ~ 4.6
Min
°
0
-
-
-
-
-
-
C
-
-
-
-
Value
0.7
50
~ 70
°
C
)
V
DDQ
Max
2.7
2.7
2.7
0.3
0.2
10
10
-
Revision : 1.5
+0.3
Publication Date : May. 2007
Max
4.0
4.0
4.0
6.0
M52S16161A
Unit
uA
uA
V
V
V
V
V
V
V
Unit
°
MA
W
V
V
C
I
I
OH
OL
Unit
pF
pF
pF
pF
3/29
= 0.1mA
Note
=-0.1mA
1
1
2
3
4