SIA907EDJT-T1-GE3 VISHAY [Vishay Siliconix], SIA907EDJT-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SIA907EDJT-T1-GE3
• Description: Dual P-Channel 20 V (D-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 67874
S11-0862-Rev. A, 02-May-11
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
12
10
8
6
4
2
0
0
Package Limited
25
D
T
C
is based on T
50
- Case Temperature (°C)
Current Derating*
75
J(max)
100
0.01
100
0.1
This document is subject to change without notice.
10
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
1
0.1
125
Safe Operating Area, Junction-to-Ambient
Limited by R
T
Single Pulse
* V
A
= 25 °C
GS
150
> minimum V
V
DS
DS(on)
- Drain-to-Source Voltage (V)
1
*
BVDSS Limited
GS
at which R
DS(on)
10
is specified
8
6
4
2
0
100 μs
1 ms
100 ms
10 ms
1 s
25
10 s
DC
100
50
T
C
- Case Temperature (°C)
Power Derating
75
Vishay Siliconix
SiA907EDJT
100
www.vishay.com/doc?91000
www.vishay.com
125
150
5