SIA907EDJT-T1-GE3 VISHAY [Vishay Siliconix], SIA907EDJT-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SIA907EDJT-T1-GE3
• Description: Dual P-Channel 20 V (D-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

SiA907EDJT
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
www.vishay.com
4
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
100
0.1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
10
10
8
6
4
2
0
1
- 50
0.0
0
Source-Drain Diode Forward Voltage
I
- 25
D
= 4.7 A
0.2
3
V
V
DS
SD
0
= 10 V
Q
- Source-to-Drain Voltage (V)
Threshold Voltage
g
0.4
- Total Gate Charge (nC)
T
6
J
25
Gate Charge
T
- Temperature (°C)
J
= 150 °C
I
D
0.6
= 250 μA
50
V
9
DS
V
DS
= 5 V
= 16 V
75
0.8
12
T
100
This document is subject to change without notice.
J
= 25 °C
1.0
15
125
150
1.2
18
0.20
0.15
0.10
0.05
0.00
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
15
20
10
0.001
5
- 50
0
0
I
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
D
Single Pulse Power, Junction-to-Ambient
= 1 A; T
- 25
I
I
D
D
0.01
= 3.6 A
= 1 A; T
1
J
V
= 125 °C
GS
0
T
J
J
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
0.1
= 25 °C
25
2
Pulse (s)
50
1
S11-0862-Rev. A, 02-May-11
I
D
= 3.6 A; T
Document Number: 67874
V
I
www.vishay.com/doc?91000
D
3
GS
75
= 3.6 A; T
10
= 4.5 V
100
J
V
= 125 °C
GS
4
J
100
= 2.5 V
= 25 °C
125
1000
150
5