SIA907EDJT-T1-GE3 VISHAY [Vishay Siliconix], SIA907EDJT-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SIA907EDJT-T1-GE3
• Description: Dual P-Channel 20 V (D-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 67874
S11-0862-Rev. A, 02-May-11
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
0.20
0.15
0.10
0.05
0.00
0.5
0.4
0.3
0.2
0.1
0.0
15
12
On-Resistance vs. Drain Current and Gate Voltage
9
6
3
0
0.0
0
0
Gate Current vs. Gate-to-Source Voltage
0.5
3
3
V
V
GS
DS
Output Characteristics
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
V
1.0
GS
I
6
D
- Drain Current (A)
= 2.5 V
6
V
GS
1.5
9
V
= 10 V thru 3 V
GS
9
= 4.5 V
T
2.0
12
J
= 25 °C
This document is subject to change without notice.
V
V
V
GS
GS
GS
12
2.5
15
= 1.5 V
= 2.5 V
= 2 V
3.0
18
15
1000
10
800
600
400
200
10
10
10
10
10
10
10
10
-10
0
-2
-3
-4
-5
-6
-7
-8
-9
5
4
3
2
1
0
0.0
0
0
Gate Current vs. Gate-to-Source Voltage
C
rss
3
V
V
V
Transfer Characteristics
0.5
GS
GS
DS
5
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
6
T
C
C
Capacitance
oss
= 125 °C
T
C
1.0
10
T
= 25 °C
9
J
Vishay Siliconix
SiA907EDJT
= 150 °C
C
www.vishay.com/doc?91000
iss
1 2
T
1.5
15
T
J
www.vishay.com
C
= 25 °C
= - 55 °C
1 5
2.0
20
1 8
3