SUD45P03-10_08 VISHAY [Vishay Siliconix], SUD45P03-10_08 Datasheet - Page 4

• Manufacturer Part Number: SUD45P03-10_08
• Description: P-Channel 30-V (D-S), MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

SUD45P03-10
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
THERMAL RATINGS
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com
4
0.01
2.0
1.6
1.2
0.8
0.4
0.0
20
16
12
0.1
8
4
0
2
1
- 50
0
10
http://www.vishay.com/ppg?70766.
On-Resistance vs. Junction Temperature
-4
V
I
Duty Cycle = 0.5
0.2
0.1
0.02
0.05
D
- 25
GS
= 45 A
25
= 10 V
vs. Ambient Temperature
T
Maximum Drain Current
T
0
A
J
- Ambient Temperature (°C)
- Junction Temperature (°C)
50
10
Single Pulse
25
-3
75
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
100
10
100
-2
125
125
150
150
Square Wave Pulse Duration (s)
10
-1
500
100
1
100
0.1
10
10
1
1
0.1
0
by R
* V
Limited
GS
Source-Drain Diode Forward Voltage
DS(on)*
> minimum V
V
0.3
DS
V
Single Pulse
SD
10
T
T
- Drain-to-Source Voltage (V)
J
Safe Operating Area
A
= 150 °C
- Source-to-Drain Voltage (V)
= 25 °C
1
0.6
GS
at which R
S-81734-Rev. E, 04-Aug-08
Document Number: 70766
0.9
100
10
DS(on)
T
J
= 25 °C
is specified
1.2
500
10, 100 µs
1 ms
10 ms
100 ms
1 s
DC
100
1.5