SUD45P03-10_08 VISHAY [Vishay Siliconix], SUD45P03-10_08 Datasheet
SUD45P03-10_08
Related parts for SUD45P03-10_08
SUD45P03-10_08 Summary of contents
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... 0.018 4 TO-252 Drain Connected to Tab Top View Ordering Information: SUD45P03-10-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage b Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) b Maximum Power Dissipation Operating Junction and Storage Temperature Range ...
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... SUD45P03-10 Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...
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... Document Number: 70766 S-81734-Rev. E, 04-Aug-08 100 0. °C C 0.04 25 °C 0.03 125 °C 0.02 0.01 0. SUD45P03-10 Vishay Siliconix 125 ° ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics ...
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... SUD45P03-10 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1.6 1.2 0.8 0.4 0 Junction Temperature (°C) J On-Resistance vs. Junction Temperature THERMAL RATINGS Ambient Temperature (°C) A Maximum Drain Current vs. Ambient Temperature 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse ...
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All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...