SUD45P03-15-E3 Siliconix / Vishay, SUD45P03-15-E3 Datasheet
SUD45P03-15-E3
Specifications of SUD45P03-15-E3
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SUD45P03-15-E3 Summary of contents
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... S-57253—Rev. F, 24-Feb- ( P-Channel MOSFET Unless Otherwise Noted A Symbol 100 stg Symbol Typical R thJA R thJC Phone (408)988-8000 FaxBack (408)970-5600 Siliconix was formerly a division of TEMIC Semiconductors SUD45P03-15 Siliconix ) Limit Unit – 100 – –55 to 150 C Maximum Unit 30 C/W C/W 1.8 www.siliconix.com 1-51 ...
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... SUD45P03-15 Siliconix Specifications ( Unless Otherwise Noted) J Parameter Symbol Static Drain-Source Breakdown Voltage V (BR)DSS Gate Threshold Voltage V GS(th) Gate-Body Leakage I GSS Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current I I DSS DSS b b On-State Drain Current On State Drain Current I I D(on) ...
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... Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S-57253—Rev. F, 24-Feb- On-Resistance vs. Drain Current = – 125 iss Phone (408)988-8000 FaxBack (408)970-5600 Siliconix was formerly a division of TEMIC Semiconductors SUD45P03-15 Siliconix Transfer Characteristics T = – 125 C V – Gate-to-Source Voltage ( 4 – Drain Current (A) D Gate Charge Q – ...
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... SUD45P03-15 Siliconix Typical Characteristics (25 C Unless Otherwise Noted) On-Resistance vs. Junction Temperature – Junction Temperature ( C) J Thermal Ratings Maximum Drain Current vs. Ambiemt Temperature T – Ambient Temperature ( C) A Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 – ...
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Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description ...