ZXMC3A18DN8TC DIODES [Diodes Incorporated], ZXMC3A18DN8TC Datasheet - Page 4

• Manufacturer Part Number: ZXMC3A18DN8TC
• Description: Complementary 30V enhancement mode MOSFET
• Manufacturer: DIODES [Diodes Incorporated]

N-channel
Electrical characteristics (at T
(*) Measured under pulsed conditions. Pulse width
(†) Switching characteristics are independent of operating junction temperature.
(‡) For design aid only, not subject to production testing.
Issue 2 - September 2007
© Zetex Semiconductors plc 2007
NOTES:
Parameter
Static
Drain-source breakdown
voltage
Zero gate voltage drain current I
Gate-body leakage
Gate-source threshold voltage V
Static drain-source on-state
resistance
Forward transconductance
Dynamic
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching
Turn-on-delay time
Rise time
Turn-off delay time
Fall time
Gate charge
Total gate charge
Gate-source charge
Gate drain charge
Source-drain diode
Diode forward voltage
Reverse recovery time
Reverse recovery charge
(‡)
(*)
(†) (‡)
(*)
(‡)
(‡)
(*)(‡)
Symbol
V
I
R
g
C
C
C
t
t
t
t
Q
Q
Q
Q
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
fs
(BR)DSS
GS(th)
DS(on)
iss
oss
rss
SD
g
g
gs
gd
rr
amb
= 25°C unless otherwise stated)
300 s; duty cycle
Min.
1.0
30
4
1800
Typ. Max. Unit Conditions
17.5
19.4
20.5
41.5
289
178
5.5
8.7
8.5
5.5
7.0
33
36
0.025
0.030
0.95
100
0.5
2%.
nA
nC
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
V
A
ZXMC3A18DN8
I
V
V
I
V
V
V
V
f=1MHz
V
R
V
I
V
I
T
T
di/dt=100A/ s
D
D
D
D
j
j
DS
GS
GS
GS
DS
DS
DD
G
DS
DS
=25°C, I
=25°C, I
= 250 A, V
= 250 A, V
= 3.5A
= 3.5A
= 15V, I
≅ 6.0 , V
=30V, V
=±20V, V
= 10V, I
= 4.5V, I
= 25V, V
= 15V, I
= 15V, V
= 15V, V
S
www.zetex.com
S
D
= 6A,
= 6A, V
D
D
GS
D
= 5.8A
GS
GS
GS
GS
= 5.8A
= 6A
DS
GS
DS
= 5.3A
=0V
=0V
= 5V
= 10V
= 10V
=0V
=V
=0V
GS
GS
=0V