ZXMC3A18DN8TC DIODES [Diodes Incorporated], ZXMC3A18DN8TC Datasheet - Page 2

• Manufacturer Part Number: ZXMC3A18DN8TC
• Description: Complementary 30V enhancement mode MOSFET
• Manufacturer: DIODES [Diodes Incorporated]

Absolute maximum ratings
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
(b) For a device surface mounted on FR4 PCB measured at t
(c) Repetitive rating - pulse width limited by maximum junction temperature. Pulse width 300 s, d<= 0.02. Refer to
(d) For device with one active die.
(e) For device with two active die running at equal power.
Issue 2 - September 2007
© Zetex Semiconductors plc 2007
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current (V
Pulsed drain current
Continuous source current (body diode)
Pulsed source current (body diode)
Power dissipation at T
Linear derating factor
Power dissipation at T
Linear derating factor
Power dissipation at T
Linear derating factor
Operating and storage temperature range
Thermal resistance
Parameter
Junction to ambient
Junction to ambient
Junction to ambient
conditions.
transient thermal impedance graph.
(a)(d)
(a)(e)
(b)(d)
(c)
amb
amb
amb
(V
(V
=25°C
=25°C
=25°C
GS
GS
GS
= 10V; T
= 10V; T
= 10V; T
(a)(d)
(a)(e)
(b)(d)
(c)
amb
amb
amb
(b)
=25°C)
=70°C)
=25°C)
2
(b)(d)
(b)(d)
(a)(d)
10 sec.
Symbol
Symbol
T
R
R
R
V
V
j
I
I
, T
P
P
P
DM
DSS
SM
I
I
GS
D
S
D
D
D
JA
JA
JA
stg
N-channel P-channel
ZXMC3A18DN8
±20
7.6
6.1
5.8
3.6
30
37
37
-55 to +150
Value
1.25
100
1.8
2.1
10
14
17
70
60
www.zetex.com
-6.3
-5.0
-4.8
±20
-30
-30
3.2
30
mW/°C
mW/°C
mW/°C
°C/W
°C/W
°C/W
Unit
Unit
°C
W
W
W
V
V
A
A
A
A