ZXMC3A18DN8TC DIODES [Diodes Incorporated], ZXMC3A18DN8TC Datasheet

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ZXMC3A18DN8TC

Manufacturer Part Number
ZXMC3A18DN8TC
Description
Complementary 30V enhancement mode MOSFET
Manufacturer
DIODES [Diodes Incorporated]
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZXMC3A18DN8TC
Manufacturer:
ZETEX
Quantity:
20 000
ZXMC3A18DN8
Complementary 30V enhancement mode MOSFET
Summary
N-Channel = V
P-Channel = V
Description
This new generation of trench MOSFETs from Zetex
utilizes a unique structure that combines the benefits of
low on-resistance with fast switching speed. This makes
them ideal for high efficiency, low voltage, power
management applications.
Features
Applications
Ordering information
Device marking
ZXMC
3A18
Issue 2 - September 2007
© Zetex Semiconductors plc 2007
Device
ZXMC3A18DN8TC
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
Motor Drive
LCD backlighting
(BR)DSS
(BR)DSS
= -30V : R
= 30V : R
Reel size
(inches)
13
DS(on)
DS(on)
= 0.035 ; I
= 0.025 ; I
Tape width
(mm)
D
D
1
12
= -6.3A
= 7.6A
G1
Q1 N-Channel
Quantity
per reel
2500
D1
S1
G2
G1
S2
S1
G2
www.zetex.com
SO8
Q2 P-Channel
D2
S2
D1
D1
D2
D2

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ZXMC3A18DN8TC Summary of contents

Page 1

... Low threshold • Low gate drive • Low profile SOIC package Applications • Motor Drive • LCD backlighting Ordering information Device Reel size (inches) ZXMC3A18DN8TC Device marking ZXMC 3A18 Issue 2 - September 2007 © Zetex Semiconductors plc 2007 = 0.025 ; I = 7.6A DS(on 0.035 ; I = -6.3A DS(on) D Tape width ...

Page 2

Absolute maximum ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current ( (c) Pulsed drain current Continuous source current (body diode) Pulsed source current (body diode) Power dissipation at T =25°C amb Linear derating factor Power dissipation at ...

Page 3

Characteristics Issue 2 - September 2007 © Zetex Semiconductors plc 2007 ZXMC3A18DN8 3 www.zetex.com ...

Page 4

N-channel Electrical characteristics (at T Parameter Static Drain-source breakdown voltage Zero gate voltage drain current I Gate-body leakage Gate-source threshold voltage V Static drain-source on-state (*) resistance (*)(‡) Forward transconductance (‡) Dynamic Input capacitance Output capacitance Reverse transfer capacitance (†) ...

Page 5

Typical characteristics Issue 2 - September 2007 © Zetex Semiconductors plc 2007 ZXMC3A18DN8 5 www.zetex.com ...

Page 6

Typical characteristics Charge Basic gate charge waveform V DS 90% 10 d(on (on) Switching time waveforms Issue 2 - September 2007 © Zetex Semiconductors plc 2007 ...

Page 7

P-channel Electrical characteristics (at T Parameter Static Drain-source breakdown voltage Zero gate voltage drain current I Gate-body leakage Gate-source threshold voltage V Static drain-source on-state (*) resistance (*)(‡) Forward transconductance (‡) Dynamic Input capacitance Output capacitance Reverse transfer capacitance (†) ...

Page 8

Typical characteristics Issue 2 - September 2007 © Zetex Semiconductors plc 2007 ZXMC3A18DN8 8 www.zetex.com ...

Page 9

Typical characteristics Charge Basic gate charge waveform d(off) t (on) Switching time waveforms Issue 2 - September 2007 © Zetex Semiconductors plc 2007 Gate charge test circuit V DS ...

Page 10

Issue 2 - September 2007 © Zetex Semiconductors plc 2007 Intentionally left blank 10 ZXMC3A18DN8 www.zetex.com ...

Page 11

Package outline - SO8 DIM Inches Min. Max. A 0.053 0.069 A1 0.004 0.010 D 0.189 0.197 H 0.228 0.244 E 0.150 0.157 L 0.016 0.050 Note: Controlling dimensions are in inches. Approximate dimensions are provided in millimeters Issue 2 ...

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Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The ...

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