SIHG17N60D VISHAY [Vishay Siliconix], SIHG17N60D Datasheet - Page 7
![no-image](/images/no-image-200.jpg)
SIHG17N60D
Manufacturer Part Number
SIHG17N60D
Description
D Series Power MOSFET
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet
1.SIHG17N60D.pdf
(8 pages)
TO-247AC (HIGH VOLTAGE)
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Contour of slot optional.
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the
4. Thermal pad contour optional with dimensions D1 and E1.
5. Lead finish uncontrolled in L1.
6. Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154").
7. Outline conforms to JEDEC outline TO-247 with exception of dimension c.
Document Number: 91360
Revision: 15-Sep-08
ECN: S-81920-Rev. A, 15-Sep-08
DWG: 5971
outermost extremes of the plastic body.
DIM.
D1
A1
A2
b1
b2
b3
b4
b5
c1
A
D
b
c
0.10
19.71
13.08
MIN.
4.65
2.21
1.50
0.99
0.99
1.65
1.65
2.59
2.59
0.38
0.38
3
2 x R
5
MILLIMETERS
(2)
2 x b2
R/2
Q
M
L1
3 x b
B
C
C
A
M
1
MAX.
20.70
5.31
2.59
2.49
1.40
1.35
2.39
2.37
3.43
3.38
0.86
0.76
-
2
b4
E
4
E/2
3
2 x e
0.183
0.087
0.059
0.039
0.039
0.065
0.065
0.102
0.102
0.015
0.015
0.776
0.515
MIN.
S
D
L
INCHES
See view B
MAX.
0.209
0.102
0.098
0.055
0.053
0.094
0.093
0.135
0.133
0.034
0.030
0.815
-
D D E
A
A1
C
View B
A2
D
A
A
E
C
Ø P1
DIM.
C
Ø P
Ø k
D2
E1
L1
Q
R
E
N
S
e
L
Thermal pad
Ø k
Planting
D2
15.29
13.72
14.20
MIN.
0.51
3.71
3.56
5.31
4.52
M
7
MILLIMETERS
-
Package Information
D
ØP
5.46 BSC
7.62 BSC
5.51 BSC
(c)
B
0.254
M
Section C - C, D - D, E - E
A
View A - A
0.01
MAX.
15.87
16.10
(b1, b3, b5)
(b, b2, b4)
1.30
4.29
3.66
7.39
5.69
5.49
E1
-
4
5
M
D
(Datum B)
B
Vishay Siliconix
M
(4)
ØP1
0.300 BSC
0.020
0.602
0.540
0.559
0.146
0.140
0.209
0.178
MIN.
D1
-
c1
0.215 BSC
0.217 BSC
Base metal
5
INCHES
www.vishay.com
0.010
MAX.
0.051
0.625
0.634
0.169
0.144
0.291
0.224
0.216
-
1