SIHG17N60D VISHAY [Vishay Siliconix], SIHG17N60D Datasheet - Page 4

• Manufacturer Part Number: SIHG17N60D
• Description: D Series Power MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

S12-0685-Rev. A, 02-Apr-12
Fig. 7 - Typical Source-Drain Diode Forward Voltage
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
100
100
0.1
10
0.1
10
1
1
1
0.0
0.01
Fig. 8 - Maximum Safe Operating Area
0.1
I
T
T
Single Pulse
DM
C
J
1
= 150 °C
0.0001
= 25 °C
Limited by R
Limited
0.2
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* V
GS
V
0.1
Duty Cycle = 0.5
0.2
0.05
0.02
0.4
T
SD
> minimum V
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
J
DS(on)
- Source-to-Drain Voltage (V)
V
= 150 °C
DS
10
OPERATION IN THIS AREA
- Drain-to-Source Voltage (V)
0.6
Single Pulse
Limited by R
Fig. 11 - Normalized Thermal Transient Impedance, Junction-to-Case
GS
0.8
at which R
DS(on)
1.0
100
T
DS(on)
0.001
For technical questions, contact:
J
= 25 °C
BVDSS Limited
1.2
is specified
1.4
10 ms
100 μs
1 ms
1000
1.6
Square Wave Pulse Duration (s)
4
0.01
Fig. 10 - Typical Drain-to-Source Voltage vs. Temperature
20.00
15.00
10.00
[e-mail]
Fig. 9 - Maximum Drain Current vs. Case Temperature
5.00
0.00
725
700
675
650
625
600
575
550
25
-60 -40 -20
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50
0
T
J
- Temperature (°C)
20
75
T
0.1
J
,Temperature (°C)
40
60
100
SiHG17N60D
Vishay Siliconix
Document Number: 91496
80 100 120 140
125
160
150
1