SIHG17N60D VISHAY [Vishay Siliconix], SIHG17N60D Datasheet - Page 3

• Manufacturer Part Number: SIHG17N60D
• Description: D Series Power MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
S12-0685-Rev. A, 02-Apr-12
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Fig. 1 - Typical Output Characteristics, T
Fig. 2 - Typical Output Characteristics, T
50
40
30
20
10
30
24
18
12
60
50
40
30
20
10
0
6
0
0
0
0
Fig. 3 - Typical Transfer Characteristics
0
TOP
BOTYTOM 5.0
TOP
BOTYTOM 5.0V
T J = 150 °C
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5
5
V
V
15V
14V
13V
12V
11V
10V
9.0V
8.0V
7.0V
6.0V
5
15V
V
DS
14V
13V
12V
11V
10V
9.0V
8.0V
7.0V
6.0V
DS
GS
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
- Drain-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
10
10
T J = 25 °C
T
T
J
J
= 25
= 150
10
15
15
15
20
20
For technical questions, contact:
7 V
C
C
7V
20
= 150 °C
= 150 °C
25
25
25
30
30
3
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
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10000
Fig. 4 - Normalized On-Resistance vs. Temperature
1000
100
20
18
16
14
12
10
10
8
6
4
2
0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0
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- 60 - 40 - 20
0
I
D
20.0
= 12 A
V
DS
T
Q
J
C
g
- Drain-to-Source Voltage (V)
0
- Junction Temperature (°C)
rss
I
V
200
- Total Gate Charge (nC)
D
GS
= 10 A
20
= 10 V
C
V
oss
DS
40.0
40
=120 V
SiHG17N60D
Vishay Siliconix
60
Document Number: 91496
V
DS
C
iss
= 300 V
80 100 120 140 160
400
60.0
V
DS
= 480 V
80.0
600