2N7002-AE3-R UTC [Unisonic Technologies], 2N7002-AE3-R Datasheet - Page 2

• Manufacturer Part Number: 2N7002-AE3-R
• Description: N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
• Manufacturer: UTC [Unisonic Technologies]

2N7002
Drain-Source Voltage
Drain-Gate Voltage (R
Gate Source Voltage
Maximum Drain
Current
Maximum Power Dissipation
Derated above 25°C
Operating Temperature
Storage Temperature
Thermal Resistance, Junction to Ambient
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage, Forward
Gate-Body leakage Reverse
ON CHARACTERISTICS (Note)
Gate Threshold Voltage
Drain-Source On-Voltage
On-State Drain Current
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
Maximum Pulsed Drain-Source Diode
Forward Current
Maximum Continuous Drain-Source
Diode Forward Current
Note: Pulse Test: Pulse Width≤300µs, Duty Cycle≤2.0%
ABSOLUTE MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
PARAMETER
PARAMETER
PARAMETER
GS
Continuous
Non Repetitive(tp<50µs)
Continuous
Pulsed
≤1MΩ)
SYMBOL
R
V
V
BV
I
I
I
DS (ON)
DS (ON)
C
I
GSSR
D(ON)
C
t
V
GSSF
GS (th)
C
g
t
I
DSS
OFF
ON
SM
Is
FS
oss
SD
iss
rss
DSS
(Ta=25°C unless otherwise noted.)
SYMBOL
SYMBOL
(T
V
V
V
T
T
A
θ
P
=25°C, unless otherwise specified.)
DGR
OPR
DSS
GSS
I
STG
V
V
T
V
V
V
V
V
V
V
T
V
T
V
V
V
I
R
V
I
R
V
D
JA
D
D
D
J
J
J
GS
DS
GS
GS
GS
GS
GS
GS
GS
GS
DS
DS
DD
DD
GS
=200mA, V
GEN
=200mA, V
GEN
=125°C
=100°C
=100°C
TEST CONDITIONS
=0V, I
=60V, V
=10V,V
≥2V
=25V,V
=30V, R
=30V, R
=0V, Is=115mA (Note )
=20V, V
= 10V, I
=-20V, V
= V
= 5.0V, I
=10V, I
=5.0V, I
=25Ω
=25Ω
DS(ON),
DS
D
, I
=10µA
DS
GS
D
GS
D
D
L
L
DS
D
=500mA
D
=150Ω
=25Ω
=250µA
GS
GS
=500mA
DS
≥2V
=50mA
=0V,f=1.0MHz
=50mA
I
=0V
=0V
D
=10V
=0V
=10V
=200mA
DS(ON)
-40 ~ +150
RATINGS
RATINGS
0 ~ +70
±20
±40
115
800
200
625
1.6
60
60
MIN
500
60
80
1
2700
TYP
0.09
0.88
320
2.1
0.6
1.2
1.7
1.7
2.4
20
11
4
MAX
-100
3.75
13.5
13.5
QW-R206-037,B
100
115
MOSFET
0.5
2.5
1.5
7.5
7.5
1.5
0.8
50
25
20
20
1
5
mW/°C
UNIT
UNIT
°C/W
mW
mA
°C
V
V
V
UNIT
mA
mA
mS
mA
µA
nA
nA
pF
nS
nS
pF
pF
2
Ω
V
V
V
V
A