2N7002-AE3-R UTC [Unisonic Technologies], 2N7002-AE3-R Datasheet

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2N7002-AE3-R

Manufacturer Part Number
2N7002-AE3-R
Description
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Manufacturer
UTC [Unisonic Technologies]
Datasheet
2N7002
N-CHANNEL ENHANCEMENT
MODE FIELD EFFECT
TRANSISTOR
resistance while provide rugged, reliable, and fast switching
performance. It can be used in most applications requiring up to
400mA DC and can deliver pulsed currents up to 2A. The product
is particularly suited for low voltage, low current applications such
as small servo motor control, power MOSFET gate drivers, and
other switching applications
* High density cell design for low R
* Voltage controlled small signal switch
* Rugged and reliable
* High saturation current capability
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co.,
The UTC 2N7002 has been designed to minimize on-state
ORDERING INFORMATION
DESCRIPTION
MARKING
FEATURES
2N7002-AE3-R
Normal
UNISONIC TECHNOLOGIES CO.,
Order Number
2N7002L-AE3-R
Lead free
3P
DS(ON)
.
Package
SOT-23
Tape Reel
Packing
*Pb-free plating product number: 2N7002L
PIN CONFIGURATION
PIN NO.
1
2
3
1
SOURCE
GATE
DRAIN
2
PIN NAME
3
SOT-23
QW-R206-037,B
MOSFET
1

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2N7002-AE3-R Summary of contents

Page 1

... FEATURES * High density cell design for low R * Voltage controlled small signal switch * Rugged and reliable * High saturation current capability MARKING 3P ORDERING INFORMATION Order Number Normal Lead free 2N7002-AE3-R 2N7002L-AE3-R www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., . DS(ON) Package Packing SOT-23 Tape Reel MOSFET ...

Page 2

... ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Drain-Gate Voltage (R ≤1MΩ) GS Gate Source Voltage Continuous Non Repetitive(tp<50µs) Maximum Drain Continuous Current Pulsed Maximum Power Dissipation Derated above 25°C Operating Temperature Storage Temperature THERMAL CHARACTERISTICS PARAMETER Thermal Resistance, Junction to Ambient ELECTRICAL CHARACTERISTICS ...

Page 3

... TEST CIRCUIT AND WAVEFORM (on) Output , V Input , V UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com. GEN G S Figure (off ) r 90% out 10% 50% 50% in 10% Pulse Width Figure 2. Switching Waveforms MOSFET OUT DUT t off t f 90% 10% Inverted 90% ...

Page 4

... TYPICAL CHARACTERICS 2 9.0V V =10V GS 1 DRAIN - SOURCE VOLTAGE, V Figure 3. On-Region Characteristics 2 V =10V GS I =500mA D 1.75 1.5 1.25 1 0.75 0 JUCTION TEMPERATURE, T Figure 5. On-Resistance Varisation with Temperature 2 V =10V DS 1 1.2 0 GATE TO SOURCE VOLTAGE , V Figure 7. Transfer Characteristics UNISONIC TECHNOLOGIES CO., LTD www ...

Page 5

... TYPICAL CHARACTERICS (cont.) 1 250μA D 1.075 1.05 1.025 1 0.975 0.95 0.925 -50 - JUCTION TEMPERATURE, T Figure 9. Breakdown Voltage Varisation with Temperature =0V GS f=1MHz DRAIN TO SOURCE VOLTAGE, V Figure 11. Capacitance Characteristics 0.5 0.1 0.05 V =0V GS SINGLE PULSE 0.01 T =25℃ ...

Page 6

... UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury ...

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