1N90G-TA3-T UTC [Unisonic Technologies], 1N90G-TA3-T Datasheet

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1N90G-TA3-T

Manufacturer Part Number
1N90G-TA3-T
Description
1 Amps, 900 Volts N-CHANNEL POWER MOSFET
Manufacturer
UTC [Unisonic Technologies]
Datasheet
1N90
1 Amps, 900 Volts
N-CHANNEL POWER MOSFET
UTC’s advanced technology to provide costomers planar stripe and
DMOS technology. This technology specializes in allowing a minimum
on-state resistance, superior switching performance. It also can
withstand high energy pulse in the avalanche and commutation mode.
power supply.
* 1.0A, 900V, R
* High switching speed
* Improved dv/dt capability
* 100% avalanche tested
Note: Pin Assignment: G: Gate D: Drain
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
1.Gate
The UTC 1N90 is an N-channel mode power MOSFET, using
The UTC 1N90 is universally applied in high efficiency switch mode
ORDERING INFORMATION
1N90L-TA3-T
1N90L-TF3-T
1N90L-TF1-T
DESCRIPTION
FEATURES
SYMBOL
Lead Free
Ordering Number
DS(on)
UNISONIC TECHNOLOGIES CO., LTD
=16Ω @V
2.Drain
3.Source
1N90G-TA3-T
1N90G-TF3-T
1N90G-TF1-T
Halogen Free
GS
=10V
S: Source
Preliminary
TO-220F1
TO-220F
Package
TO-220
G
G
G
1
Pin Assignment
D
D
D
2
1
1
1
S
S
S
3
Power MOSFET
Packing
Tube
Tube
Tube
QW-R502-496.b
TO-220F1
TO-220
TO-220F
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1N90G-TA3-T Summary of contents

Page 1

... High switching speed * Improved dv/dt capability * 100% avalanche tested SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free 1N90L-TA3-T 1N90G-TA3-T 1N90L-TF3-T 1N90G-TF3-T 1N90L-TF1-T 1N90G-TF1-T Note: Pin Assignment: G: Gate D: Drain www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd Preliminary Pin Assignment Package 1 ...

Page 2

ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed (Note 1) Avalanche Current (Note 1) Single Pulsed (Note 2) Avalanche Energy Repetitive (Note 1) Peak Diode Recovery dv/dt (Note 3) TO-220 Power Dissipation TO-220F/TO-220F1 Junction Temperature ...

Page 3

ELECTRICAL CHARACTERISTICS PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ΔBV Drain-Source Leakage Current Forward Gate-Source Leakage Current Reverse ON CHARACTERISTICS Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer ...

Page 4

TEST CIRCUITS AND WAVEFORMS Peak Diode Recovery dv/dt Test Circuit & Waveforms dv/dt controlled (Driver (DUT (DUT) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Preliminary + DUT ...

Page 5

Gate Charge Test Circuit 12V 200nF 50kΩ 300nF V GS 3mA Unclamped Inductive Switching Test Circuit 10V t P UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Preliminary V GS Same Type as DUT 10V V ...

Page 6

UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC ...

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