BFP740F_07 INFINEON [Infineon Technologies AG], BFP740F_07 Datasheet - Page 2

• Manufacturer Part Number: BFP740F_07
• Description: NPN Silicon Germanium RF Transistor
• Manufacturer: INFINEON [Infineon Technologies AG]

Maximum Ratings
Parameter
Collector-emitter voltage
T
T
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
T
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-emitter cutoff current
V
Collector-base cutoff current
V
Emitter-base cutoff current
V
DC current gain
I
1
2
C
C
T S is measured on the collector lead at the soldering point to the pcb
For calculation of R
A
A
S
CE
CB
EB
= 1 mA, I
= 25 mA, V
> 0°C
= 0.5 V, I
= 13 V, V
= 5 V, I
0°C
90°C
B
E
= 0
C
= 0
CE
BE
= 0
thJA
= 3 V, pulse measured
= 0
please refer to Application Note Thermal Resistance
1)
2)
A
= 25°C, unless otherwise specified
2
Symbol
V
I
I
I
h
Symbol
V
V
V
V
I
I
P
T
T
T
Symbol
R
CES
CBO
EBO
C
B
FE
CEO
CES
CBO
EBO
tot
j
A
stg
(BR)CEO
thJS
min.
160
4
-
-
-
-65 ... 150
-65 ... 150
Values
Value
Value
160
150
typ.
250
4.7
3.5
1.2
13
13
30
370
4
3
-
-
-
max.
2007-04-20
100
400
30
3
-
BFP740F
Unit
V
µA
nA
µA
-
Unit
V
mA
mW
°C
Unit
K/W