BFP740F_07 INFINEON [Infineon Technologies AG], BFP740F_07 Datasheet

Page 1

NPN Silicon Germanium RF Transistor High gain ultra low noise RF transistor Provides outstanding performance for a wide range of wireless applications GHz and more Ideal for CDMA and WLAN applications Outstanding noise figure F = 0.5 ...

Page 2

Maximum Ratings Parameter Collector-emitter voltage T > 0° 0°C A Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current 1) Total power dissipation T 90°C S Junction temperature Ambient temperature Storage temperature Thermal Resistance Parameter 2) Junction ...

Page 3

Electrical Characteristics at T Parameter AC Characteristics (verified by random sampling) Transition frequency mA GHz C CE Collector-base capacitance MHz ...

Page 4

SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transistor Chip Data: 384 400 V VAF = 1.586 - NE = 1.28 V VAR = 1 1.69 RBM = 220 fF CJE = 2 ...

Page 5

Total power dissipation P tot 180 mW 140 120 100 105 120 ° Permissible Pulse Load totmax totDC ...

Page 6

Third order Intercept Point IP (Output parameter 900 MHz 1.00V ...

Page 7

Power gain parameter in GHz 0.5 1 1 [V] CE ...

Page 8

Source impedance for min. noise figure vs. frequency 1.5 0.5 0.4 0 8mA c 0.2 4GHz 3GHz 5GHz 0.1 2.4GHz 1.8GHz 6GHz 0.2 0.4 ...

Page 9

Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package TSFP-4 1.4 ±0.05 0.55 ±0.04 0.2 ±0. 0.2 0.15 ±0.05 ±0.05 0.5 ...

Page 10

Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). ...