2SK3418-E RENESAS [Renesas Technology Corp], 2SK3418-E Datasheet - Page 5

• Manufacturer Part Number: 2SK3418-E
• Description: Silicon N Channel MOS FET High Speed Power Switching
• Manufacturer: RENESAS [Renesas Technology Corp]

2SK3418
Rev.2.00 Sep. 10, 2004 page 5 of 7
Vin
100
15 V
80
60
40
20
0
Source to Drain Voltage
Reverse Drain Current vs.
Source to Drain Voltage
0.4
Avalanche Test Circuit
0.03
0.01
0.3
0.1
V
Monitor
3
1
5 V
10 µ
10 V
50Ω
DS
0.8
Rg
D = 1
0.5
V
GS
Normalized Transient Thermal Impedance vs. Pulse Width
1.2
= 0, – 5 V
100 µ
D. U. T
Pulse Test
I
Monitor
V
AP
1.6
L
SD
(V)
2.0
1 m
V
Pulse Width PW (S)
DD
10 m
0
400
320
240
160
P
80
V
θch – c(t) = γs (t) • θch – c
θch – c = 1.14 C/W, Tc = 25 C
DM
0
DD
25
100 m
E
Maximum Avalanche Energy vs.
Channel Temperature Tch ( C)
Channel Temperature Derating
AR
I
=
50
AP
Avalanche Waveform
PW
T
1
2
I
• L • I
D
75
1
AP
Tc = 25 C
D =
100
2
•
I
V
duty < 0.1 %
Rg > 50 Ω
PW
AP
T
V
DD
DSS
125
= 60 A
10
V
= 15 V
DSS
V
– V
DS
V
DD
150
(BR)DSS