2SK3418-E RENESAS [Renesas Technology Corp], 2SK3418-E Datasheet - Page 3

• Manufacturer Part Number: 2SK3418-E
• Description: Silicon N Channel MOS FET High Speed Power Switching
• Manufacturer: RENESAS [Renesas Technology Corp]

2SK3418
Main Characteristics
Rev.2.00 Sep. 10, 2004 page 3 of 7
160
120
100
0.5
0.4
0.3
0.2
0.1
80
40
80
60
40
20
0
0
0
Drain to Source Saturation Voltage vs.
Drain to Source Voltage
Gate to Source Voltage
Power vs. Temperature Derating
Typical Output Characteristics
10 A
Case Temperature
4 V
5 V
V
2
4
Gate to Source Voltage
GS
50
= 10 V
3 V
8
4
100
2.5 V
I = 50 A
12
D
6
Pulse Test
Tc ( C)
Pulse Test
20 A
150
V
V
DS
GS
16
8
(V)
(V)
200
20
10
1000
100
300
100
100
0.3
0.1
0.3
0.1
30
10
80
60
40
20
30
10
Static Drain to Source on State Resistance
3
1
3
1
0.1
0
1
Ta = 25 C
Drain to Source Voltage
Gate to Source Voltage
Operation in
this area is
limited by R
V
Pulse Test
Typical Transfer Characteristics
Maximum Safe Operation Area
DS
0.3
3
= 10 V
1
Drain Current
vs. Drain Current
V
GS
10
1
75 C
10 V
= 4 V
DS(on)
2
30
3
3
I
D
100
10
Pulse Test
Tc = – 25 C
(A)
V
V
25 C
DS
GS
300
4
30
(V)
(V)
1000
100
5