2SK3418-E RENESAS [Renesas Technology Corp], 2SK3418-E Datasheet - Page 4

• Manufacturer Part Number: 2SK3418-E
• Description: Silicon N Channel MOS FET High Speed Power Switching
• Manufacturer: RENESAS [Renesas Technology Corp]

2SK3418
Rev.2.00 Sep. 10, 2004 page 4 of 7
1000
500
200
100
Static Drain to Source on State Resistance
100
50
20
10
20
16
12
80
60
40
20
8
4
0
–50
0.1
0
Reverse Drain Current
Pulse Test
I = 85 A
di / dt = 50 A / µs
V
D
Case Temperature
Dynamic Input Characteristics
V
GS
Body-Drain Diode Reverse
0.3
DS
Gate Charge
4 V
80
= 0, Ta = 25 C
0
vs. Temperature
V
Recovery Time
GS
V
1
DS
160
50
= 10 V
= 50 V
I = 50 A
D
V
3
25 V
10 V
GS
100
240
Qg (nc)
V
10
DS
10, 20, 50 A
Tc
= 50 V
I
150
320
DR
10, 20 A
25 V
10 V
30
( C)
(A)
200
400
100
20
16
12
8
4
0
10000
30000
1000
1000
3000
500
200
100
100
200
100
500
300
0.5
50
20
10
10
50
20
5
1
0.1 0.2
2
0.1
0
Drain to Source Voltage V
Forward Transfer Admittance vs.
V
Pulse Test
DS
0.3
Switching Characteristics
Drain to Source Voltage
Typical Capacitance vs.
= 10 V
10
Drain Current
Drain Current
0.5
Tc = – 25 C
Drain Current
Coss
Crss
1
1
t
r
20
75 C
V
PW = 5 µs, duty < 1 %
Ciss
GS
t
f
3
2
25 C
= 10 V, V
30
t
5
d(off)
I
I
10
10
D
D
t
d(on)
DD
(A)
V
f = 1 MHz
(A)
20
GS
40
DS
30
= 30 V
= 0
50
(V)
100
100
50