M40Z300MH1TR STMICROELECTRONICS [STMicroelectronics], M40Z300MH1TR Datasheet - Page 12

• Manufacturer Part Number: M40Z300MH1TR
• Description: 5V or 3V NVRAM Supervisor for Up to 8 LPSRAMs
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

M40Z300, M40Z300W
Table 6. DC Characteristics
Note: 1. Valid for Ambient Operating Temperature: T
12/21
I
V
I
I
V
Sym
V
CCDR
THS
I
V
OUT1
OUT2
V
V
V
LI
I
V
OHB
CC
PFD
BAT
OH
OL
SO
IH
(2)
IL
2. Outputs deselected.
3. For RST & BL pins (Open Drain).
4. Chip Enable outputs (E1
5. Measured with V
Higher leakage currents will reduce battery life.
Input Leakage Current
Supply Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output Low Voltage
(open drain)
Output High Voltage
V
V
V
Back-up)
Data Retention Mode
Current
Threshold Select
Voltage
Power-fail Deselect
Voltage (THS = V
Power-fail Deselect
Voltage (THS = V
Battery Back-up
Switchover Voltage
Battery Voltage
OH
OUT
OUT
Battery Back-up
Current (Active)
Current (Battery
Parameter
(5)
(3)
OUT
OUT
and E1
SS
)
CON
(4)
)
CON
- E4
Test Condition
V
V
V
- E4
CON
0V
I
OUT
OUT
OUT
I
OUT2
Outputs open
OH
I
I
OL
OL
CON
) can only sustain CMOS leakage currents in the battery back-up mode.
> V
= –2.0mA
> V
> V
V
= 4.0mA
= 10mA
= –1.0µA
IN
open.
BAT
CC
CC
A
= 0 to 70°C or –40 to 85°C; V
V
–0.3
–0.2
–0.3
CC
(1)
–0.3
Min
V
2.2
2.4
2.0
4.5
4.2
2.0
SS
M40Z300
4.35
Typ
100
2.9
4.6
3.0
2.9
3
CC
V
CC
V
Max
4.75
= 2.7 to 3.6V or 4.5 to 5.5V(except where noted).
250
150
100
0.8
0.4
0.4
3.6
4.5
3.6
±1
OUT
6
+ 0.3
–0.3
Min
V
2.0
2.4
2.0
2.8
2.5
2.0
SS
M40Z300W
Typ
100
2.9
2.9
2.6
2.5
2.9
2
V
CC
V
Max
150
100
100
0.8
0.4
0.4
3.6
3.0
2.7
3.6
±1
OUT
4
+ 0.3
Unit
mA
mA
mA
µA
µA
nA
V
V
V
V
V
V
V
V
V
V
V