BH616UV8010DI70 BSI [Brilliance Semiconductor], BH616UV8010DI70 Datasheet - Page 5

• Manufacturer Part Number: BH616UV8010DI70
• Description: Ultra Low Power/High Speed CMOS SRAM 512K X 16 bit
• Manufacturer: BSI [Brilliance Semiconductor]

n AC ELECTRICAL CHARACTERISTICS (T
n SWITCHING WAVEFORMS (READ CYCLE)
R0201-BH616UV8010
PARAMETER
READ CYCLE
READ CYCLE 1
JEDEC
NAME
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
E1LQV
E2LQV
E1LQX
E2LQX
E1HQZ
E2HQZ
GHQZ
AVQX
BLQV
GLQV
BLQX
GLQX
BHQZ
AVQX
AVAX
ADDRESS
D
OUT
PARANETER
NAME
t
t
t
t
t
t
t
t
t
ACS1
ACS2
CHZ1
CHZ2
t
t
t
t
CLZ1
CLZ2
t
t
BDO
(1,2,4)
OLZ
OHZ
RC
OE
OH
AA
BA
BE
Read Cycle Time
Address Access Time
Chip Select Access Time
Chip Select Access Time
Data Byte Control Access Time
Output Enable to Output Valid
Chip Select to Output Low Z
Chip Select to Output Low Z
Data Byte Control to Output Low Z
Output Enable to Output Low Z
Chip Select to Output High Z
Chip Select to Output High Z
Data Byte Control to Output High Z (LB, UB)
Output Enable to Output High Z
Data Hold from Address Change
DESCRIPTION
A
t
OH
= -40
O
C to +85
t
AA
5
(LB, UB)
(LB, UB)
(CE1)
(CE2)
(CE1)
(CE2)
(CE1)
(CE2)
O
t
C)
RC
CYCLE TIME : 55ns
MIN.
55
10
10
10
10
--
--
--
--
--
--
--
--
--
5
TYP.
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
MAX.
55
55
55
55
30
25
25
25
25
--
--
--
--
--
--
BH616UV8010
CYCLE TIME : 70ns
MIN.
70
10
10
10
10
--
--
--
--
--
5
--
--
--
--
t
OH
TYP.
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
MAX.
70
70
70
70
35
30
30
30
30
Revision
May.
--
--
--
--
--
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UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
2006
1.2