BH616UV1611BI55 BSI [Brilliance Semiconductor], BH616UV1611BI55 Datasheet - Page 6

• Manufacturer Part Number: BH616UV1611BI55
• Description: Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit / 2M x 8-bit
• Manufacturer: BSI [Brilliance Semiconductor]

n BYTE FUNCTION
n AC ELECTRICAL CHARACTERISTICS (T
R0201-BH616UV1611
READ CYCLE
PARAMETER
PARAMETER
NAME
JEDEC
NAME
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
E1LQV
E2LQV
E1LQX
E2LQX
E1HQZ
E2HQZ
GHQZ
AVQX
BLQV
GLQV
BLQX
GLQX
BHQZ
AVQX
t
AVAX
t
BS
BR
CE2
CE1
BYTE
PARANETER
BYTE Setup Time
BYTE Recovery Time
NAME
t
t
t
t
t
t
t
t
t
ACS1
ACS2
CHZ1
CHZ2
t
t
t
t
CLZ1
CLZ2
t
t
BDO
OLZ
OHZ
RC
AA
BA
OE
OH
BE
Read Cycle Time
Address Access Time
Chip Select Access Time
Chip Select Access Time
Data Byte Control Access Time
Output Enable to Output Valid
Chip Select to Output Low Z
Chip Select to Output Low Z
Data Byte Control to Output Low Z
Output Enable to Output Low Z
Chip Deselect to Output High Z
Chip Deselect to Output High Z
Data Byte Control to Output High Z (LB, UB)
Output Disable to Output High Z
Data Hold from Address Change
PARAMETER
DESCRIPTION
A
= -40
t
BS
O
C to +85
6
(LB, UB)
(LB, UB)
(CE1)
(CE2)
(CE1)
(CE2)
(CE1)
(CE2)
O
C)
CYCLE TIME : 55ns
MIN.
55
10
10
10
10
--
--
--
--
--
--
--
--
--
5
t
TYP.
BR
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
MIN.
MAX.
5
5
55
55
55
55
25
25
25
25
25
--
--
--
--
--
--
BH616UV1611
CYCLE TIME : 70ns
MIN.
70
10
10
10
10
--
--
--
--
--
--
--
--
--
5
MAX.
--
--
TYP.
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
MAX.
Revision
Otc.
70
70
70
70
35
35
35
35
30
--
--
--
--
--
--
UNITS
ms
ms
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
2006
1.3