PHD34NQ10T PHILIPS [NXP Semiconductors], PHD34NQ10T Datasheet - Page 6

• Manufacturer Part Number: PHD34NQ10T
• Description: N-channel TrenchMOS transistor
• Manufacturer: PHILIPS [NXP Semiconductors]

Philips Semiconductors
August 1999
N-channel TrenchMOS
Fig.13. Typical turn-on gate-charge characteristics.
50
45
40
35
30
25
20
15
10
15
14
13
12
11
10
5
0
9
8
7
6
5
4
3
2
1
0
I
F
0
0
Source-Drain Diode Current, IF (A)
Gate-source voltage, VGS (V)
= f(V
VGS = 0 V
Tj = 25 C
ID = 34A
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
Fig.14. Typical reverse diode current.
5
SDS
10
); conditions: V
15
Source-Drain Voltage, VSDS (V)
20
Gate charge, QG (nC)
175 C
VDD = 20 V
V
GS
25
= f(Q
30
GS
G
35
= 0 V; parameter T
VDD = 80 V
)
Tj = 25 C
40
transistor
1.1 1.2 1.3 1.4 1.5
45
50
55
60
j
6
avalanche current (I
100
10
1
0.001
Fig.15. Maximum permissible non-repetitive
Maximum Avalanche Current, I
Tj prior to avalanche = 150 C
PHP34NQ10T, PHB34NQ10T
unclamped inductive load
0.01
Avalanche time, t
AS
) versus avalanche time (t
0.1
AS
(A)
AV
(ms)
PHD34NQ10T
Product specification
25 C
1
Rev 1.000
10
AV
);