PHD34NQ10T PHILIPS [NXP Semiconductors], PHD34NQ10T Datasheet
PHD34NQ10T
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PHD34NQ10T Summary of contents
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... N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. Applications:- • d.c. to d.c. converters • switched mode power supplies The PHP34NQ10T is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB34NQ10T is supplied in the SOT404 (D The PHD34NQ10T is supplied in the SOT428 (DPAK) surface mounting package. PINNING SOT78 (TO220AB) PIN DESCRIPTION 1 ...
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... Measured tab to centre of die Measured from drain lead to centre of die (SOT78 package only) Measured from source lead to source bond pad MHz Product specification PHP34NQ10T, PHB34NQ10T PHD34NQ10T MIN. MAX 170 refer - 35 MIN. TYP. MAX. UNIT - - 1 ...
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... Diode forward voltage SD t Reverse recovery time rr Q Reverse recovery charge rr August 1999 transistor CONDITIONS -dI /dt = 100 Product specification PHP34NQ10T, PHB34NQ10T PHD34NQ10T MIN. TYP. MAX. UNIT - - 140 - 0.85 1 0.24 - Rev 1.000 ...
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... Drain-Source On Resistance, RDS(on) (Ohms) 0.1 0.09 0.08 0.07 0. 0.05 100 us 0. 0.01 100 ms 0 100 1000 0 Fig.6. Typical on-state resistance Product specification PHP34NQ10T, PHB34NQ10T PHD34NQ10T Transient thermal impedance, Zth j-mb (K/ 0.5 0.2 0.1 0.05 0. single pulse 1E-05 1E-04 1E-03 1E-02 Pulse width, tp (s) Fig.4. Transient thermal impedance f(t); parameter j-mb p VGS = 10V 0.2 0.4 ...
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... I 10000 1000 100 10 100 120 140 160 180 Fig.12. Typical capacitances f f Product specification PHP34NQ10T, PHB34NQ10T PHD34NQ10T Threshold Voltage, VGS(TO) (V) maximum typical minimum 100 120 140 160 180 Junction Temperature, Tj (C) Fig.10. Gate threshold voltage. = f(T ); conditions mA; V ...
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... Fig.15. Maximum permissible non-repetitive avalanche current ( 1.1 1.2 1.3 1.4 1 Product specification PHP34NQ10T, PHB34NQ10T PHD34NQ10T Maximum Avalanche Current prior to avalanche = 150 C 0.01 0.1 1 Avalanche time, t (ms versus avalanche time (t AS unclamped inductive load ...
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... ( scale 1.3 0.7 15.8 6.4 10.3 15.0 2.54 1.0 0.4 15.2 5.9 9.7 13.5 REFERENCES JEDEC EIAJ TO-220 7 Product specification PHP34NQ10T, PHB34NQ10T PHD34NQ10T SOT78 ( max. 3.30 3.8 3.0 2.6 3.0 2.79 3.6 2.7 2.2 EUROPEAN ISSUE DATE PROJECTION 97-06-11 Rev 1.000 ...
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... Epoxy meets UL94 V0 at 1/8". August 1999 transistor E mounting 2 scale max. 0.85 0.64 1.60 10.30 2.90 15.40 11 2.54 0.60 0.46 1.20 9.70 2.10 14.80 REFERENCES IEC JEDEC EIAJ 8 Product specification PHP34NQ10T, PHB34NQ10T PHD34NQ10T 2 -PAK); 3 leads SOT404 base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION 98-12-14 99-06-25 Rev 1.000 ...
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... Philips Semiconductors N-channel TrenchMOS MOUNTING INSTRUCTIONS Dimensions in mm August 1999 transistor 11.5 9.0 2.0 3.8 5.08 Fig.18. SOT404 : soldering pattern for surface mounting . 9 Product specification PHP34NQ10T, PHB34NQ10T PHD34NQ10T 17.5 Rev 1.000 ...
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... max. max. max. min. max. 0.89 1.1 5.36 0.4 6.22 4.81 6.73 2.285 4.57 4.0 0.71 0.9 5.26 0.2 5.98 6.47 4.45 REFERENCES IEC JEDEC EIAJ 10 Product specification PHP34NQ10T, PHB34NQ10T PHD34NQ10T SOT428 max. max. min. 0.7 10.4 2.95 0.2 0.2 0.5 2.55 0.5 9.6 EUROPEAN ISSUE DATE PROJECTION 98-04-07 Rev 1.000 ...
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... Philips Semiconductors N-channel TrenchMOS MOUNTING INSTRUCTIONS Dimensions in mm August 1999 transistor 7.0 2.15 2.5 4.57 Fig.20. SOT428 : soldering pattern for surface mounting . 11 Product specification PHP34NQ10T, PHB34NQ10T PHD34NQ10T 7.0 1.5 Rev 1.000 ...
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... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. August 1999 transistor 12 Product specification PHP34NQ10T, PHB34NQ10T PHD34NQ10T Rev 1.000 ...